MRF5S21045NBR1 Freescale Semiconductor, MRF5S21045NBR1 Datasheet - Page 8
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MRF5S21045NBR1
Manufacturer Part Number
MRF5S21045NBR1
Description
MOSFET RF N-CH 28V 10W TO272-4
Manufacturer
Freescale Semiconductor
Specifications of MRF5S21045NBR1
Transistor Type
N-Channel
Frequency
2.11GHz
Gain
14.5dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
500mA
Voltage - Test
28V
Power - Output
10W
Package / Case
TO-272-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
10W
Power Gain (typ)@vds
14.5dB
Frequency (min)
2.11GHz
Frequency (max)
2.17GHz
Package Type
TO-272 WB EP
Pin Count
5
Forward Transconductance (typ)
3.2S
Reverse Capacitance (typ)
0.9@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
25.5%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA/CDMA/TDMA
Number Of Elements
1
Power Dissipation (max)
130000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF5S21045NBR1
Manufacturer:
TOSHIBA
Quantity:
656
Part Number:
MRF5S21045NBR1
Manufacturer:
FREE
Quantity:
20 000
MRF5S21045NR1 MRF5S21045NBR1
8
Figure 15. Series Equivalent Source and Load Impedance
Z
Z
source
load
Input
Matching
Network
2000
2140
2170
2200
2110
MHz
f
V
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
gate to ground.
from drain to ground.
Z
source
5.61 - j7.85
4.92 - j7.85
8.15 - j5.91
7.07 - j7.32
6.28 - j7.71
f = 2200 MHz
Z
Z
DQ
load
source
Ω
Device
Under
Test
= 500 mA, P
Z
o
= 10 Ω
f = 2000 MHz
out
Z
= 10 W Avg.
load
4.78 - j5.19
4.04 - j4.14
3.81 - j3.69
3.69 - j3.39
3.57 - j3.11
Z
f = 2000 MHz
f = 2200 MHz
load
Ω
Output
Matching
Network
Z
source
Freescale Semiconductor
RF Device Data