MRF5S21045NBR1 Freescale Semiconductor, MRF5S21045NBR1 Datasheet - Page 2
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MRF5S21045NBR1
Manufacturer Part Number
MRF5S21045NBR1
Description
MOSFET RF N-CH 28V 10W TO272-4
Manufacturer
Freescale Semiconductor
Specifications of MRF5S21045NBR1
Transistor Type
N-Channel
Frequency
2.11GHz
Gain
14.5dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
500mA
Voltage - Test
28V
Power - Output
10W
Package / Case
TO-272-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Output Power (max)
10W
Power Gain (typ)@vds
14.5dB
Frequency (min)
2.11GHz
Frequency (max)
2.17GHz
Package Type
TO-272 WB EP
Pin Count
5
Forward Transconductance (typ)
3.2S
Reverse Capacitance (typ)
0.9@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
25.5%
Mounting
Surface Mount
Mode Of Operation
2-Carrier W-CDMA/CDMA/TDMA
Number Of Elements
1
Power Dissipation (max)
130000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF5S21045NBR1
Manufacturer:
TOSHIBA
Quantity:
656
Part Number:
MRF5S21045NBR1
Manufacturer:
FREE
Quantity:
20 000
MRF5S21045NR1 MRF5S21045NBR1
2
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
2122.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
Per JESD 22-A113, IPC/JEDEC J-STD-020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain-Source On-Voltage
Forward Transconductance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
D
GS
GS
= 120 μAdc)
= 500 mAdc)
= 1.2 Adc)
= 1.2 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Test Methodology
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
Rating
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
IRL
DSS
DSS
GSS
g
η
= 500 mA, P
3
rss
fs
ps
D
out
13.5
Min
Package Peak Temperature
0.2
—
—
—
—
—
24
—
—
—
2
2
= 10 W Avg., f1 = 2112.5 MHz, f2 =
14.5
25.5
260
Typ
-37
-39
-12
3.8
3.2
0.9
—
—
—
—
—
1C (Minimum)
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
0.35
16.5
-35
-37
3.5
10
-9
—
—
—
1
1
5
RF Device Data
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
°C
pF
%
S