MRF5S21045NBR1 Freescale Semiconductor, MRF5S21045NBR1 Datasheet - Page 2

• Manufacturer Part Number: MRF5S21045NBR1
• Description: MOSFET RF N-CH 28V 10W TO272-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF5S21045NBR1

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 14.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 500mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-272-4
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 68V
• Output Power (max): 10W
• Power Gain (typ)@vds: 14.5dB
• Frequency (min): 2.11GHz
• Frequency (max): 2.17GHz
• Package Type: TO-272 WB EP
• Pin Count: 5
• Forward Transconductance (typ): 3.2S
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 25.5%
• Mounting: Surface Mount
• Mode Of Operation: 2-Carrier W-CDMA/CDMA/TDMA
• Number Of Elements: 1
• Power Dissipation (max): 130000mW
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF5S21045NR1 MRF5S21045NBR1
2
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
2122.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
Per JESD 22-A113, IPC/JEDEC J-STD-020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain-Source On-Voltage
Forward Transconductance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
D
GS
GS
= 120 μAdc)
= 500 mAdc)
= 1.2 Adc)
= 1.2 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Test Methodology
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
Rating
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
IRL
DSS
DSS
GSS
g
η
= 500 mA, P
3
rss
fs
ps
D
out
13.5
Min
Package Peak Temperature
0.2
—
—
—
—
—
24
—
—
—
2
2
= 10 W Avg., f1 = 2112.5 MHz, f2 =
14.5
25.5
260
Typ
-37
-39
-12
3.8
3.2
0.9
—
—
—
—
—
1C (Minimum)
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
0.35
16.5
-35
-37
3.5
10
-9
—
—
—
1
1
5
RF Device Data
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
°C
pF
%
S