MRFE6S9046NR1 Freescale Semiconductor, MRFE6S9046NR1 Datasheet - Page 7
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MRFE6S9046NR1
Manufacturer Part Number
MRFE6S9046NR1
Description
MOSFET RF N-CH 45W TO-270-4
Manufacturer
Freescale Semiconductor
Datasheet
1.MRFE6S9046GNR1.pdf
(21 pages)
Specifications of MRFE6S9046NR1
Transistor Type
N-Channel
Frequency
960MHz
Gain
19dB
Voltage - Rated
66V
Current Rating
10µA
Current - Test
300mA
Voltage - Test
28V
Power - Output
35.5W
Package / Case
TO-270-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
66V
Output Power (max)
17.8W
Power Gain (typ)@vds
19dB
Frequency (min)
920MHz
Frequency (max)
960MHz
Package Type
TO-270 WB GULL
Pin Count
5
Input Capacitance (typ)@vds
120@28VpF
Output Capacitance (typ)@vds
318@28VpF
Reverse Capacitance (typ)
0.9@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
57%
Mounting
Surface Mount
Mode Of Operation
CDMA/GSM/GSM EDGE
Number Of Elements
1
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRFE6S9046NR1
Manufacturer:
UMS
Quantity:
1 400
RF Device Data
Freescale Semiconductor
24
22
20
18
16
14
20
18
16
14
12
10
−40
−45
−50
−55
−60
−65
−70
−75
8
6
4
2
0
1
1
0
V
f = 940 MHz, EDGE Modulation
G
DD
ps
Figure 8. Power Gain and Drain Efficiency
η
V
f = 940 MHz, EDGE Modulation
D
DD
= 28 Vdc, I
η
Figure 10. Spectral Regrowth at 400 kHz
D
Figure 12. EVM and Drain Efficiency
= 28 Vdc, I
85_C
10
T
25_C
P
C
P
out
DQ
= −30_C
out
versus Output Power
, OUTPUT POWER (WATTS) AVG.
P
versus Output Power
, OUTPUT POWER (WATTS) CW
DQ
= 285 mA
versus Output Power
out
= 285 mA
, OUTPUT POWER (WATTS)
T
C
20
= 85_C
10
10
−30_C
30
T
EVM
V
I
f = 940 MHz
DQ
C
DD
= −30_C
= 300 mA
= 28 Vdc
85_C
TYPICAL CHARACTERISTICS
85_C
40
85_C
25_C
−30_C
−30_C
25_C
25_C
70
60
50
75
60
45
30
15
0
35
23
11
65
59
53
47
41
29
17
5
−50
−55
−60
−65
−70
−75
−80
−85
6
5
4
3
2
1
0
22
21
20
19
18
17
16
900
0
900
V
f = 940 MHz, EDGE Modulation
V
I
EDGE Modulation
DQ
DD
DD
Figure 11. Spectral Regrowth at 600 kHz
Figure 13. Power Gain versus Frequency
910
910
= 285 mA
= 28 Vdc, I
= 28 Vdc
Figure 9. EVM versus Frequency
10
920
920
P
MRFE6S9046NR1 MRFE6S9046GNR1
versus Output Power
DQ
out
T
, OUTPUT POWER (WATTS)
P
= 285 mA
C
f, FREQUENCY (MHz)
930
out
f, FREQUENCY (MHz)
= −30_C
930
20
= 26.5 W Avg.
17.8 W Avg.
25_C
85_C
5 W Avg.
940
940
T
C
= 85_C
30
V
P
I
950
DQ
DD
out
950
= 300 mA
= 35 W CW
= 28 Vdc
960
960
−30_C
40
970
25_C
970
980
50
980
7