MRFE6S9046NR1 Freescale Semiconductor, MRFE6S9046NR1 Datasheet - Page 20

no-image

MRFE6S9046NR1

Manufacturer Part Number
MRFE6S9046NR1
Description
MOSFET RF N-CH 45W TO-270-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFE6S9046NR1

Transistor Type
N-Channel
Frequency
960MHz
Gain
19dB
Voltage - Rated
66V
Current Rating
10µA
Current - Test
300mA
Voltage - Test
28V
Power - Output
35.5W
Package / Case
TO-270-4
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
66V
Output Power (max)
17.8W
Power Gain (typ)@vds
19dB
Frequency (min)
920MHz
Frequency (max)
960MHz
Package Type
TO-270 WB GULL
Pin Count
5
Input Capacitance (typ)@vds
120@28VpF
Output Capacitance (typ)@vds
318@28VpF
Reverse Capacitance (typ)
0.9@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
57%
Mounting
Surface Mount
Mode Of Operation
CDMA/GSM/GSM EDGE
Number Of Elements
1
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRFE6S9046NR1
Manufacturer:
UMS
Quantity:
1 400
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
MRFE6S9046NR1 MRFE6S9046GNR1
20
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
May 2009
Date
• Initial Release of Data Sheet
PRODUCT DOCUMENTATION
REVISION HISTORY
Description
Freescale Semiconductor
RF Device Data

Related parts for MRFE6S9046NR1