MRF6S20010GNR1 Freescale Semiconductor, MRF6S20010GNR1 Datasheet - Page 26

• Manufacturer Part Number: MRF6S20010GNR1
• Description: MOSFET RF N-CH 28V 10W TO2704 GW
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S20010GNR1

• Transistor Type: N-Channel
• Frequency: 2.17GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

26
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
MRF6S20010NR1 MRF6S20010GNR1
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
2
3
June 2009
Dec. 2008
Date
• Changed Storage Temperature Range in Max Ratings table from - 65 to +175 to - 65 to +150 for
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
• Corrected V
• Corrected C
• Updated Part Numbers in Tables 6, 7, 8, Component Designations and Values, to RoHS compliant part
• Adjusted scale for Fig. 7, Intermodulation Distortion Products versus Tone Spacing, to better match the
• Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps
• Removed ALT1 definition from Fig. 21, Single - Carrier CCDF N - CDMA, given no supporting performance
• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 20 - 22. Corrected cross hatch pattern in
• Replaced Case Outline 1265A - 02 with 1265A - 03, Issue C, p. 1, 23 - 25. Corrected cross hatch pattern and
• Added Product Documentation and Revision History, p. 26
• Corrected decimal placement for C
• Added footnote, Measurement made with device in straight lead configuration before any lead forming
• Added AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 26
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
standardization across products, p. 1
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
Dynamic Characteristics table, p. 2
numbers, p. 4, 10, 14
device’s capabilities, p. 6
limitations, p. 7
operating characteristics and location of MTTF calculator for device, p. 7
information provided, p. 13
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC
Standard Package Number.
its dimensions (D2 and E2) on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3
changed from Min - Max .150 - .180 to .150 Min). Added pin numbers. Corrected mm dimension L for
gull - wing foot from 4.90 - 5.06 Min - Max to 0.46 - 0.61 Min - Max. Added JEDEC Standard Package Number.
Dynamic Characteristics table, p. 2
operation is applied, to Functional Tests table, p. 2.
Product Documentation, Application Notes, p. 26
DS
iss
test condition to indicate AC stimulus on the V
to V
DD
in the RF test condition voltage callout for V
REVISION HISTORY
iss
(changed 0.12 pF to 120 pF) and C
Description
GS
connection versus the V
GS(Q)
, On Characteristics table, p. 2
oss
(changed 0.02 pF to 20 pF),
Freescale Semiconductor
DS
RF Device Data
2
connection,
and listed