MRF6S20010GNR1 Freescale Semiconductor, MRF6S20010GNR1 Datasheet - Page 17

• Manufacturer Part Number: MRF6S20010GNR1
• Description: MOSFET RF N-CH 28V 10W TO2704 GW
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S20010GNR1

• Transistor Type: N-Channel
• Frequency: 2.17GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 130mA
• Voltage - Test: 28V
• Power - Output: 10W
• Package / Case: TO-270-2 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
f = 2110 MHz
Z
Z
load
load
f = 2110 MHz
f = 1805 MHz
f = 2170 MHz
f = 1930 MHz
f = 1880 MHz
f = 1990 MHz
f = 2170 MHz
Z
f = 1930 MHz
source
Z
load
Z
Z
Figure 29. Series Equivalent Source and Load Impedance
o
o
Z
= 25 Ω
o
= 25 Ω
= 25 Ω
f = 1990 MHz
f = 1805 MHz
Input
Matching
Network
Z
source
f = 1880 MHz
Z
Z
source
source
Device
Under
Test
Z
load
Z
Z
source
load
1930
1960
1990
1805
1840
1880
2140
2170
MHz
MHz
V
MHz
2110
V
V
Output
Matching
Network
DD
DD
DD
f
f
f
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
gate to ground.
from drain to ground.
13.237 + j5.810
13.953 + j6.084
14.858 + j6.279
9.237 + j1.849
9.521 + j2.144
9.889 + j2.434
3.619 + j0.792
3.918 + j0.797
4.087 + j0.558
MRF6S20010NR1 MRF6S20010GNR1
Z
Z
Z
DQ
DQ
DQ
source
source
source
1900 MHz
1800 MHz
2170 MHz
Ω
Ω
Ω
= 130 mA, P
= 130 mA, P
= 130 mA, P
2.754 + j3.668
2.772 + j3.833
2.542 + j3.942
2.695 + j4.170
2.770 + j3.497
2.445 + j3.698
2.544 + j3.068
2.673 + j3.291
2.818 + j3.406
out
out
out
= 10 W PEP
= 1 W Avg.
= 4 W Avg.
Z
Z
Z
load
load
load
Ω
Ω
Ω
17