MRF1535NT1 Freescale Semiconductor, MRF1535NT1 Datasheet - Page 6
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MRF1535NT1
Manufacturer Part Number
MRF1535NT1
Description
IC MOSFET RF N-CHAN TO272-6 WRAP
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF1535NT1.pdf
(19 pages)
Specifications of MRF1535NT1
Transistor Type
N-Channel
Frequency
520MHz
Gain
13.5dB
Voltage - Rated
40V
Current Rating
6A
Current - Test
500mA
Voltage - Test
12.5V
Power - Output
35W
Package / Case
TO-272-6 wrap
Drain Source Voltage Vds
40V
Continuous Drain Current Id
6A
Power Dissipation Pd
35W
Rf Transistor Case
TO-272
No. Of Pins
6
Peak Reflow Compatible (260 C)
Yes
Frequency Max
520MHz
Rohs Compliant
Yes
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
6A
Drain Source Voltage (max)
40V
Output Power (max)
35W
Power Gain (typ)@vds
13.5dB
Frequency (min)
135MHz
Frequency (max)
520MHz
Package Type
TO-272 WARP EP
Pin Count
6
Drain Source Resistance (max)
700@5Vmohm
Input Capacitance (typ)@vds
250(Max)@12.5VpF
Output Capacitance (typ)@vds
150(Max)@12.5VpF
Reverse Capacitance (typ)
20(Max)@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
50(Min)%
Mounting
Screw
Number Of Elements
1
Power Dissipation (max)
135000mW
Vswr (max)
20
Screening Level
Military
Frequency Min
400MHz
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF1535NT1
Manufacturer:
Freescale Semiconductor
Quantity:
135
Company:
Part Number:
MRF1535NT1
Manufacturer:
MURATA
Quantity:
1 000
Part Number:
MRF1535NT1
Manufacturer:
FREESCALE
Quantity:
20 000
MRF1535NT1 MRF1535FNT1
6
50
45
40
35
30
15
14
13
12
10
11
70
60
50
40
30
20
10
9
200
0
Figure 15. Output Power versus Biasing Current
Figure 17. Output Power versus Supply Voltage
10
470 MHz
Figure 13. Gain versus Output Power
450 MHz
10
400
450 MHz
11
520 MHz
V
DD
P
I
out
DQ
, SUPPLY VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS)
, BIASING CURRENT (mA)
20
600
500 MHz
12
450 MHz
470 MHz
500 MHz
520 MHz
30
470 MHz
800
TYPICAL CHARACTERISTICS, 450 - 520 MHz
520 MHz
13
40
V
P
DD
in
= 34 dBm
I
P
DQ
V
= 12.5 Vdc
in
DD
1000
= 34 dBm
= 250 mA
500 MHz
= 12.5 Vdc
14
50
1200
60
15
70
60
50
40
30
20
80
70
60
50
40
80
70
60
50
40
200
Figure 16. Drain Efficiency versus Biasing Current
10
0
Figure 18. Drain Efficiency versus Supply Voltage
Figure 14. Drain Efficiency versus Output Power
520 MHz
450 MHz
10
400
11
V
P
470 MHz
DD
out
I
DQ
, SUPPLY VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS)
, BIASING CURRENT (mA)
500 MHz
20
600
12
450 MHz
520 MHz
30
470 MHz
800
Freescale Semiconductor
520 MHz
13
470 MHz
40
V
P
DD
in
I
P
DQ
= 34 dBm
in
V
450 MHz
= 12.5 Vdc
DD
= 34 dBm
= 250 mA
RF Device Data
500 MHz
500 MHz
1000
= 12.5 Vdc
14
50
1200
60
15