MRF1535NT1 Freescale Semiconductor, MRF1535NT1 Datasheet - Page 6

• Manufacturer Part Number: MRF1535NT1
• Description: IC MOSFET RF N-CHAN TO272-6 WRAP
• Manufacturer: Freescale Semiconductor

Specifications of MRF1535NT1

• Transistor Type: N-Channel
• Frequency: 520MHz
• Gain: 13.5dB
• Voltage - Rated: 40V
• Current Rating: 6A
• Current - Test: 500mA
• Voltage - Test: 12.5V
• Power - Output: 35W
• Package / Case: TO-272-6 wrap
• Drain Source Voltage Vds: 40V
• Continuous Drain Current Id: 6A
• Power Dissipation Pd: 35W
• Rf Transistor Case: TO-272
• No. Of Pins: 6
• Peak Reflow Compatible (260 C): Yes
• Frequency Max: 520MHz
• Rohs Compliant: Yes
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 6A
• Drain Source Voltage (max): 40V
• Output Power (max): 35W
• Power Gain (typ)@vds: 13.5dB
• Frequency (min): 135MHz
• Frequency (max): 520MHz
• Package Type: TO-272 WARP EP
• Pin Count: 6
• Drain Source Resistance (max): 700@5Vmohm
• Input Capacitance (typ)@vds: 250(Max)@12.5VpF
• Output Capacitance (typ)@vds: 150(Max)@12.5VpF
• Reverse Capacitance (typ): 20(Max)@12.5VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50(Min)%
• Mounting: Screw
• Number Of Elements: 1
• Power Dissipation (max): 135000mW
• Vswr (max): 20
• Screening Level: Military
• Frequency Min: 400MHz
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MRF1535NT1 MRF1535FNT1
6
50
45
40
35
30
15
14
13
12
10
11
70
60
50
40
30
20
10
9
200
0
Figure 15. Output Power versus Biasing Current
Figure 17. Output Power versus Supply Voltage
10
470 MHz
Figure 13. Gain versus Output Power
450 MHz
10
400
450 MHz
11
520 MHz
V
DD
P
I
out
DQ
, SUPPLY VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS)
, BIASING CURRENT (mA)
20
600
500 MHz
12
450 MHz
470 MHz
500 MHz
520 MHz
30
470 MHz
800
TYPICAL CHARACTERISTICS, 450 - 520 MHz
520 MHz
13
40
V
P
DD
in
= 34 dBm
I
P
DQ
V
= 12.5 Vdc
in
DD
1000
= 34 dBm
= 250 mA
500 MHz
= 12.5 Vdc
14
50
1200
60
15
70
60
50
40
30
20
80
70
60
50
40
80
70
60
50
40
200
Figure 16. Drain Efficiency versus Biasing Current
10
0
Figure 18. Drain Efficiency versus Supply Voltage
Figure 14. Drain Efficiency versus Output Power
520 MHz
450 MHz
10
400
11
V
P
470 MHz
DD
out
I
DQ
, SUPPLY VOLTAGE (VOLTS)
, OUTPUT POWER (WATTS)
, BIASING CURRENT (mA)
500 MHz
20
600
12
450 MHz
520 MHz
30
470 MHz
800
Freescale Semiconductor
520 MHz
13
470 MHz
40
V
P
DD
in
I
P
DQ
= 34 dBm
in
V
450 MHz
= 12.5 Vdc
DD
= 34 dBm
= 250 mA
RF Device Data
500 MHz
500 MHz
1000
= 12.5 Vdc
14
50
1200
60
15