MRF1535NT1 Freescale Semiconductor, MRF1535NT1 Datasheet - Page 2
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MRF1535NT1
Manufacturer Part Number
MRF1535NT1
Description
IC MOSFET RF N-CHAN TO272-6 WRAP
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF1535NT1.pdf
(19 pages)
Specifications of MRF1535NT1
Transistor Type
N-Channel
Frequency
520MHz
Gain
13.5dB
Voltage - Rated
40V
Current Rating
6A
Current - Test
500mA
Voltage - Test
12.5V
Power - Output
35W
Package / Case
TO-272-6 wrap
Drain Source Voltage Vds
40V
Continuous Drain Current Id
6A
Power Dissipation Pd
35W
Rf Transistor Case
TO-272
No. Of Pins
6
Peak Reflow Compatible (260 C)
Yes
Frequency Max
520MHz
Rohs Compliant
Yes
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
6A
Drain Source Voltage (max)
40V
Output Power (max)
35W
Power Gain (typ)@vds
13.5dB
Frequency (min)
135MHz
Frequency (max)
520MHz
Package Type
TO-272 WARP EP
Pin Count
6
Drain Source Resistance (max)
700@5Vmohm
Input Capacitance (typ)@vds
250(Max)@12.5VpF
Output Capacitance (typ)@vds
150(Max)@12.5VpF
Reverse Capacitance (typ)
20(Max)@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
50(Min)%
Mounting
Screw
Number Of Elements
1
Power Dissipation (max)
135000mW
Vswr (max)
20
Screening Level
Military
Frequency Min
400MHz
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MRF1535NT1
Manufacturer:
Freescale Semiconductor
Quantity:
135
Company:
Part Number:
MRF1535NT1
Manufacturer:
MURATA
Quantity:
1 000
Part Number:
MRF1535NT1
Manufacturer:
FREESCALE
Quantity:
20 000
MRF1535NT1 MRF1535FNT1
2
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
RF Characteristics (In Freescale Test Fixture)
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Source Leakage Current
Gate Threshold Voltage
Drain - Source On - Voltage
Drain - Source On - Voltage
Input Capacitance (Includes Input Matching Capacitance)
Output Capacitance
Reverse Transfer Capacitance
Common - Source Amplifier Power Gain
Drain Efficiency
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
GS
DS
GS
GS
DS
DS
DS
DD
DD
= 60 Vdc, V
= 12.5 Vdc, I
= 12.5 Vdc, V
= 12.5 Vdc, V
= 12.5 Vdc, V
= 0 Vdc, I
= 10 Vdc, V
= 5 Vdc, I
= 10 Vdc, I
= 12.5 Vdc, P
= 12.5 Vdc, P
D
D
D
= 100 μAdc)
= 0.6 A)
GS
DS
D
= 2.0 Adc)
GS
GS
GS
out
out
= 400 μA)
= 0 Vdc)
= 0 Vdc)
= 35 Watts, I
= 35 Watts, I
= 0 V, f = 1 MHz)
= 0 V, f = 1 MHz)
= 0 V, f = 1 MHz)
Characteristic
DQ
DQ
(T
= 500 mA)
= 500 mA)
A
= 25°C unless otherwise noted)
f = 520 MHz
f = 520 MHz
V
Symbol
R
V
V
(BR)DSS
I
I
C
DS(on)
DS(on)
C
GS(th)
C
G
DSS
GSS
oss
η
rss
iss
ps
Min
60
—
—
—
—
—
—
—
—
—
1
13.5
Typ
Freescale Semiconductor
—
—
—
—
—
—
—
—
—
55
Max
250
150
0.3
2.6
0.7
20
—
—
—
1
1
RF Device Data
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
pF
pF
pF
dB
%
Ω