MW6S010GNR1 Freescale Semiconductor, MW6S010GNR1 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/2/262/freescale_semiconductor_sml.jpg)
MW6S010GNR1
Manufacturer Part Number
MW6S010GNR1
Description
MOSFET RF N-CH 28V 10W TO270-2GW
Manufacturer
Freescale Semiconductor
Specifications of MW6S010GNR1
Transistor Type
N-Channel
Frequency
960MHz
Gain
18dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
125mA
Voltage - Test
28V
Power - Output
10W
Package / Case
TO-270-2 Gull Wing
Drain Source Voltage Vds
68V
Power Dissipation Pd
10W
Operating Frequency Range
450MHz To 1500MHz
Operating Temperature Range
-10°C To +150°C
Rohs Compliant
Yes
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Power Gain (typ)@vds
20dB
Frequency (min)
450MHz
Frequency (max)
1.5GHz
Package Type
TO-270 EP
Pin Count
3
Input Capacitance (typ)@vds
23@28VpF
Output Capacitance (typ)@vds
10@28VpF
Reverse Capacitance (typ)
0.32@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
33%
Mounting
Surface Mount
Mode Of Operation
2-Tone
Number Of Elements
1
Power Dissipation (max)
61400mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MW6S010GNR1
Manufacturer:
FREESCALE
Quantity:
20 000
MW6S010NR1 MW6S010GNR1
2
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
100 kHz Tone Spacing
Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) V
Two - Tone Test, 100 kHz Tone Spacing
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
Power Gain
Drain Efficiency
Intermodulation Distortion
Input Return Loss
(V
(V
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
DS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
= 5 Vdc, V
= 28 Vdc, I
= 10 Vdc, I
DS
D
D
D
GS
GS
GS
= 100 μAdc)
= 125 mAdc, Measured in Functional Test)
= 0.3 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Test Methodology
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
Rating
V
V
DD
I
I
I
C
DS(on)
C
IMD
IMD
GS(th)
GS(Q)
C
G
G
IRL
IRL
DSS
DSS
GSS
η
η
= 125 mA, P
3
oss
rss
iss
ps
D
ps
D
= 28 Vdc, I
17.5
DQ
Min
Package Peak Temperature
out
1.5
—
—
—
—
—
—
—
31
—
—
—
—
—
—
2
= 150 mA, P
= 10 W PEP, f = 960 MHz, Two - Tone Test,
0.27
0.32
260
Typ
- 37
- 18
- 40
- 10
2.3
3.1
10
23
18
32
20
33
—
—
—
out
Class
= 10 W PEP, 420 - 470 MHz,
Freescale Semiconductor
1A
III
A
Max
0.35
20.5
- 33
- 10
10
—
—
—
—
—
—
—
—
1
1
3
4
RF Device Data
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
dB
dB
°C
pF
pF
pF
%
%