MW6S010GNR1 Freescale Semiconductor, MW6S010GNR1 Datasheet - Page 12
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MW6S010GNR1
Manufacturer Part Number
MW6S010GNR1
Description
MOSFET RF N-CH 28V 10W TO270-2GW
Manufacturer
Freescale Semiconductor
Specifications of MW6S010GNR1
Transistor Type
N-Channel
Frequency
960MHz
Gain
18dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
125mA
Voltage - Test
28V
Power - Output
10W
Package / Case
TO-270-2 Gull Wing
Drain Source Voltage Vds
68V
Power Dissipation Pd
10W
Operating Frequency Range
450MHz To 1500MHz
Operating Temperature Range
-10°C To +150°C
Rohs Compliant
Yes
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
68V
Power Gain (typ)@vds
20dB
Frequency (min)
450MHz
Frequency (max)
1.5GHz
Package Type
TO-270 EP
Pin Count
3
Input Capacitance (typ)@vds
23@28VpF
Output Capacitance (typ)@vds
10@28VpF
Reverse Capacitance (typ)
0.32@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
33%
Mounting
Surface Mount
Mode Of Operation
2-Tone
Number Of Elements
1
Power Dissipation (max)
61400mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MW6S010GNR1
Manufacturer:
FREESCALE
Quantity:
20 000
MW6S010NR1 MW6S010GNR1
12
Figure 20. Series Equivalent Source and Load Impedance — 450 MHz
f = 400 MHz
Z
Z
Z
source
load
Input
Matching
Network
source
MHz
400
420
440
460
480
500
f
Z
f = 400 MHz
V
o
DD
= 25 Ω
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
gate to ground.
from drain to ground.
Z
10.7 + j12.6
11.5 + j13.9
10.6 + j9.5
source
9.0 + j3.8
8.8 + j5.4
9.6 + j6.6
Z
DQ
source
Ω
f = 500 MHz
= 150 mA, P
Device
Under
Test
f = 500 MHz
Z
load
out
= 10 W PEP
Z
16.9 + j12.7
16.4 + j11.1
load
15.0 + j1.4
14.3 + j3.3
15.0 + j4.7
16.3 + j7.3
Z
load
Ω
Output
Matching
Network
Freescale Semiconductor
RF Device Data