PD85025C STMicroelectronics, PD85025C Datasheet

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PD85025C

Manufacturer Part Number
PD85025C
Description
TRANS RF N-CH LDMOST M243
Manufacturer
STMicroelectronics
Datasheet

Specifications of PD85025C

Transistor Type
LDMOS
Frequency
945MHz
Gain
17.5dB
Voltage - Rated
40V
Current Rating
7A
Current - Test
300mA
Voltage - Test
13.6V
Power - Output
10W
Package / Case
M243
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Features
Description
The PD85025C is a common source
N-channel, enhancement-mode lateral Field-
Effect RF power transistor. It is designed for high
gain, broadband commercial and industrial
applications. It operates at 13.6 V in common
source mode at frequencies of up to 1 GHz.
PD85025C boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology.
PD85025C’s superior linearity performance
makes it an ideal solution for mobile application.
Table 1.
December 2007
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Excellent thermal stability
Common source configuration
P
13.6 V
BeO free package
ESD protection
In compliance with the 2002/95/EC european
directive
OUT
= 25 W with 16 dB gain @ 945 MHz /
Order code
PD85025C
Device summary
RF power transistor - LdmoST family
Package
Rev 1
M243
Figure 1.
1. Drain
2. Gate
Pin connection
Epoxy sealed
M243
1
2
PD85025C
Packing
Box
3
3. Source
Preliminary Data
www.st.com
1/10
10

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PD85025C Summary of contents

Page 1

... Effect RF power transistor designed for high gain, broadband commercial and industrial applications. It operates at 13 common source mode at frequencies GHz. PD85025C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD85025C’s superior linearity performance makes it an ideal solution for mobile application. ...

Page 2

... Contents Contents 1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 ESD protection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 PD85025C ...

Page 3

... PD85025C 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T Symbol V (BR)DSS DISS STG 1.2 Thermal data Table 3. Thermal data Symbol R thJC CASE Parameter Drain-source voltage Gate-source voltage Drain current Power dissipation (@ °C) C Max. operating junction temperature Storage temperature Parameter Junction - case thermal resistance Electrical data = 25° ...

Page 4

... V DS Test conditions = 300 945 MHz DQ = 300 mA 945 MHz DQ OUT = 300 mA P3dB 945 MHz DQ OUT = 300 mA 945 MHz DQ OUT Test conditions Human body model Machine model PD85025C Min Typ Max 1 1 TBD 270 310 MHz MHz MHz 1.0 Min. Typ. Max ...

Page 5

... PD85025C 3 Impedance Figure 2. Current conventions Table 7. Impedance data Freq. (MHz) 945 MHz Z (Ω 2.03 Impedance Z (Ω 2.20 5/10 ...

Page 6

... Tamb = - 40 °C Coss Ciss 5 4 Freq = 1 MHz Vgs = 4.0V Figure 6. 6 Tamb = + 60 ° Vgs = 5.5V Vgs = 6.0V Vgs = 4.0V PD85025C DC output characteristics VDS[V] Vgs = 4.5V Vgs = 5.0V Vgs = 5.5V DC output characteristic VDS[V] Vgs = 4.5V Vgs = 5.0V Vgs = 5.5V 12 Vgs = 6.0V 12 Vgs = 6.0V ...

Page 7

... PD85025C Figure 7. Output power and efficiency vs input power Pout Efficiency 0.0 0.5 1.0 Pin (W) Figure 9. Pout and drain current vs gate voltage 35 Pout Vgs (V) Figure 11. Pout and drain current vs supply voltage 50 45 Pout Vdd (V) Figure Freq = 945 MHz 10 10 Vdd = 13.6V Idq = 300 mA ...

Page 8

... Max 5.21 5.72 5.46 6.48 5.59 6.10 14.27 20.07 20.57 8.89 9.40 0.10 0.15 3.18 4.45 1.83 2.24 1.27 1.78 PD85025C Inch Min Typ Max 0.205 0.225 0.215 0.255 0.220 0.240 0.562 0.790 0.810 0.350 0.370 0.004 0.006 0.125 0.175 0.072 ...

Page 9

... PD85025C 6 Revision history Table 9. Document revision history Date 10-Dec-2007 Revision 1 Initial release. Revision history Changes 9/10 ...

Page 10

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 10/10 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com PD85025C ...

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