PD84006L-E STMicroelectronics, PD84006L-E Datasheet - Page 4

• Manufacturer Part Number: PD84006L-E
• Description: TRANS RF POWER LDMOST
• Manufacturer: STMicroelectronics

Specifications of PD84006L-E

• Transistor Type: LDMOS
• Frequency: 870MHz
• Gain: 15dB
• Voltage - Rated: 25V
• Current Rating: 5A
• Current - Test: 150mA
• Voltage - Test: 7.5V
• Power - Output: 2W
• Package / Case: PowerFLAT™ (5 x 5)
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: - 0.5 V, + 15 V
• Continuous Drain Current: 5 A
• Power Dissipation: 31 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Broadband Performances: POUT = 6 W with 13 dB gain @ 870 MHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-8288

Electrical characteristics
2
2.1
2.2
2.3
2.4
4/16
Electrical characteristics
Static
Table 4.
Dynamic
Table 5.
ESD protection characteristics
Table 6.
Moisture sensitivity level
Table 7.
mismatch
Symbol
V
Symbol
V
C
C
DS(ON)
I
C
I
P
Load
GS(Q)
DSS
GSS
G
OSS
RSS
ISS
3
n
PS
dB
D
T
CASE
V
V
V
V
V
V
V
Static
Dynamic
ESD protection characteristics
Moisture sensitivity level
V
V
V
V
All phase angles
GS
GS
DS
GS
GS
GS
GS
DD
DD
DD
DD
= 0 V
= 5 V
= 10 V
= 10 V
= 0 V
= 0 V
= 0 V
= +25
= 7.5 V, I
= 7.5 V, I
= 7.5 V, I
= 9.5 V, I
o
C
DQ
DQ
DQ
DQ
= 150 mA, P
= 150 mA, f = 870 MHz
= 150 mA, P
= 150 mA, P
Human body model
Test methodology
Test conditions
Test conditions
Doc ID 13786 Rev 4
V
V
Test conditions
V
V
V
Machine model
I
I
DS
DS
D
D
DS
DS
DS
J-STD-020B
= 1 A
= 150 mA
= 25 V
= 0 V
= 7 V
= 7 V
= 7 V
OUT
OUT
OUT
= P
= 2W, f = 870 MHz
= 8W, f = 870 MHz
3
dB, f = 870 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
20:1
Min
Min
15
50
5
3
Typ
0.34
1.45
Typ
60
40
33
6
PD84006L-E
Max
Max
4.3
1
1
Rating
MSL 3
Class
M3
2
VSWR
Unit
Unit
dB
µA
µA
pF
pF
pF
%
w
V
V