PD55003L-E STMicroelectronics, PD55003L-E Datasheet - Page 4

• Manufacturer Part Number: PD55003L-E
• Description: TRANSISTOR RF 5X5 POWERFLAT
• Manufacturer: STMicroelectronics

Specifications of PD55003L-E

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 19dB
• Voltage - Rated: 40V
• Current Rating: 2.5A
• Current - Test: 50mA
• Voltage - Test: 12.5V
• Power - Output: 3W
• Package / Case: PowerFLAT™ (5 x 5)
• Drain Source Voltage Vds: 40V
• Continuous Drain Current Id: 2.5A
• Rf Transistor Case: PowerFLAT
• No. Of Pins: 8
• Svhc: No SVHC (15-Dec-2010)
• External Depth: 1mm
• Rohs Compliant: Yes
• Configuration: Single Quad Drain Quad Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 14 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 40V
• Output Power (max): 3W
• Power Gain (typ)@vds: 19dB
• Frequency (max): 1GHz
• Package Type: Power Flat
• Pin Count: 14
• Forward Transconductance (typ): 1S
• Input Capacitance (typ)@vds: 34@12.5VpF
• Output Capacitance (typ)@vds: 23@12.5VpF
• Reverse Capacitance (typ): 1.8@12.5VpF
• Operating Temp Range: -65C to 150C
• Drain Efficiency (typ): 52%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 14000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details
• Other names: 497-6472-2; PD55003L-E

2
Table 3.
Table 4.
Table 5.
Table 6.
4/19
mismatch
Symbol
V
Symbol
V
DS(ON)
Load
I
I
C
P
C
GS(Q)
C
DSS
GSS
g
G
ηD
1dB
oss
iss
rss
fs
P
Static
Dynamic
Switching on/off (inductive load)
Switching energy (inductive load)
Electrical specification
(T
CASE
V
V
V
DD
DD
DD
=25°C)
=12.5V, I
=12.5V, I
=12.5V, I
V
Human Body Model
Test Methodology
DD
Test Condictions
V
Machine Model
=12.5V, I
GS
J-STD-020B
=0V, V
DQ
DQ
DQ
V
V
V
V
Test Condictions
Test Condictions
DS
V
GS
GS
GS
=50mA, P
=50mA, P
=50mA, P
DS
=10V, I
=0V, V
=20V, V
=10V, I
DQ
=10V, I
DS
=50mA, f=500MHz
=12.5V, f=1MHz
D
DS
D
=50mA
DS
OUT
OUT
OUT
D
=0.5A
=28V
=1A
=0V
=3W, f=500MHz
=3W, f=500MHz
=3W, f=500MHz
Rev1
Min.
20:1
Min.
17
50
2.0
3
Typ.
19
52
Typ.
1.0
1.8
34
23
Rating
MSL 3
Class
M3
2
Max.
Max.
0.36
5.0
1
1
VSWR
Unit
dB
Unit
mho
W
%
µA
µA
pF
pF
pF
V
V