BLS6G3135S-20,112 NXP Semiconductors, BLS6G3135S-20,112 Datasheet
BLS6G3135S-20,112
Specifications of BLS6G3135S-20,112
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BLS6G3135S-20,112 Summary of contents
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... BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 03 — 3 March 2009 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical RF performance at T production test circuit. Mode of operation f Pulsed RF CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...
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... Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S-20 Pinning Description drain gate source drain gate source Ordering information Package Name Description - flanged ceramic package; 2 mounting holes; 2 leads ceramic earless flanged package; 2 leads ...
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... unless otherwise specified class-AB production circuit. case Symbol BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S-20 Thermal characteristics Parameter thermal resistance from junction to case Characteristics Conditions drain-source breakdown V voltage gate-source threshold voltage V drain leakage current V drain cut-off current V V gate leakage current ...
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... Measured with Z Fig 1. 7.2 Ruggedness in class-AB operation The BLS6G3135-20 and BLS6G3135S-20 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S-20 Typical impedance ...
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... Power gain and drain efficiency as functions of frequency; typical values 60 D (%) mA ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz Fig 4. Efficiency as a function of load power; typical values BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S-20 001aaf983 (%) (dB 3.4 3.6 f (GHz) = 300 ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz Fig 3. 001aaf985 P (1) (W) ...
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... Power gain and drain efficiency as functions of frequency; typical values 60 D (%) mA ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz Fig 8. Efficiency as a function of load power; typical values BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S-20 001aaf987 (%) (dB 3.4 3.6 f (GHz ( 3.1 GHz ( 3.3 GHz ( 3.5 GHz Fig 7. 001aaf989 (1) P ...
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... C13 L1 R1 [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S- 4-line Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor electrolytic capacitor copper wire resistor Rev. 03 — ...
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... UNIT 7.24 4.62 0.15 10.21 mm 6.99 3.76 0.10 10.01 0.182 0.285 0.402 0.006 inches 0.148 0.275 0.394 0.004 OUTLINE VERSION IEC SOT608A Fig 11. Package outline SOT608A BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S- scale 10.29 10.21 10.29 1.14 15.75 3.30 2.92 10.03 10 ...
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... DIMENSIONS (mm dimensions are derived from the original inch dimensions) UNIT 4.62 7.24 0.15 10.21 mm 3.76 6.99 0.10 10.01 0.182 0.285 0.006 0.402 inch 0.148 0.275 0.004 0.394 OUTLINE VERSION IEC SOT608B Fig 12. Package outline SOT608B BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S- scale 10.29 10.21 10.29 1.14 15 ...
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... Table 11. Revision history Document ID BLS6G3135-20_6G3135S-20_3 20090303 Modifications: BLS6G3135-20_6G3135S-20_2 20081217 BLS6G3135-20_6G3135S-20_1 20070307 BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S-20 Abbreviations Description Laterally Diffused Metal Oxide Semiconductor Radio Frequency Short wave Band Voltage Standing-Wave Ratio Release date Data sheet status Product data sheet • ...
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... For more information, please visit: For sales office addresses, please send an email to: BLS6G3135-20_6G3135S-20_3 Product data sheet BLS6G3135-20; BLS6G3135S-20 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp ...