BLD6G21L-50,112 NXP Semiconductors, BLD6G21L-50,112 Datasheet - Page 4

• Manufacturer Part Number: BLD6G21L-50,112
• Description: TRANSISTOR DOHERTY W-CDMA SOT113
• Manufacturer: NXP Semiconductors

Specifications of BLD6G21L-50,112

• Transistor Type: LDMOS
• Frequency: 2.017GHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 10.2A
• Current - Test: 170mA
• Voltage - Test: 28V
• Power - Output: 8W
• Package / Case: SOT1130A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063508112

NXP Semiconductors
8. Application information
BLD6G21L-50_BLD6G21LS-50
Product data sheet
8.1 Ruggedness in Doherty operation
8.2 Impedance information
Table 6.
Valid for both main and peak device.
Table 7.
Mode of operation: 6-carrier TD-SCDMA; PAR 10.8 dB at 0.01 % probability on CCDF;
f = 2017.5 MHz; RF performance at V
unless otherwise specified; in a production circuit.
Table 8.
Mode of operation: Pulsed CW;
V
The BLD6G21L-50 and BLD6G21LS-50 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Table 9.
Measured Load Pull data; typical values unless otherwise specified.
Symbol Parameter
I
g
R
Symbol
P
G
η
PAR
RL
ACPR
Symbol
P
f
MHz
1995
2010
2017.5
2025
2040
GSS
GS(amp)peak
DS
fs
D
L(AV)
L(3dB)
DS(on)
p
in
O
= 28 V; I
gate leakage current
forward transconductance
drain-source on-state resistance
Parameter
output power at 3 dB gain compression
Characteristics
Application information
Application information
Typical impedance
Parameter
average output power
power gain
drain efficiency
output peak-to-average ratio
input return loss
adjacent channel power ratio
= 0 V; T
Dq
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
= 170 mA; P
All information provided in this document is subject to legal disclaimers.
case
= 25
Rev. 2 — 17 August 2010
BLD6G21L-50; BLD6G21LS-50
…continued
°
C; unless otherwise specified; in a production circuit.
L
δ
= 8 W (TD-SCDMA); f = 2017.5 MHz.
= 10 %; t
Z
Ω
3.5 − 12.3j
3.6 − 12.7j
3.6 − 12.7j
3.7 − 12.7j
4.0 − 12.9j
S
DS
= 28 V; I
p
= 100
Conditions
V
V
V
I
D
GS
DS
GS
= 1.085 A
Dq
P
Conditions
P
P
P
P
= 10 V; I
μ
= 11 V; V
= V
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
s; RF performance at V
= 170 mA; V
Conditions
GS(th)
= 8 W
= 8 W
= 8 W
= 8 W
= 8 W
D
DS
+ 3.75 V;
= 1.55 A
= 0 V
GS(amp)peak
Z
Ω
6.7 − 6.1j
6.7 − 6.1j
6.7 − 5.7j
6.4 − 5.2j
5.7 − 4.8j
Min
46
Min
-
13
39
-
8
-
L
Min Typ Max
-
1.4
-
DS
= 0 V; T
Typ
8
14.5
43
9.4
23
−24
Typ
53
= 28 V; I
© NXP B.V. 2010. All rights reserved.
-
2.2
0.52 0.736 Ω
case
Max
-
-
-
-
-
−20
Max
-
Dq
140
-
= 25
= 170 mA;
Unit
W
dB
%
dB
dB
dBc
Unit
W
°
4 of 15
Unit
nA
S
C;