BLF7G22LS-130,112 NXP Semiconductors, BLF7G22LS-130,112 Datasheet - Page 7

• Manufacturer Part Number: BLF7G22LS-130,112
• Description: TRANSISTOR PWR LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-130,112

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063501112

NXP Semiconductors
BLF881_BLF881S
Product data sheet
Fig 7.
PAR
(dB)
9.0
8.0
7.0
6.0
400
V
common-source broadband test circuit as described in
Section
and drain efficiency as function of frequency;
typical values
DVB-T PAR at 0.01 % probability on the CCDF
DS
= 50 V; I
7.2.1 DVB-T
500
8.
7.2 Broadband RF figures
7.3 Ruggedness in class-AB operation
Dq
= 0.35 A; P
The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
f = 860 MHz at rated power. Ruggedness is measured in the application circuit as
described in
600
700
L(AV)
= 33 W; measured in a
PAR
Section
η
D
800
All information provided in this document is subject to legal disclaimers.
001aal080
f (MHz)
8.
Rev. 3 — 7 December 2010
900
50
40
30
20
(%)
η
D
Fig 8.
(dB)
G
p
25
23
21
19
17
15
400
V
common-source broadband test circuit as described in
Section
DVB-T power gain and shoulder distance as
function of frequency; typical values
DS
= 50 V; I
500
8.
BLF881; BLF881S
Dq
= 0.35 A; P
600
UHF power LDMOS transistor
G
IMD
p
shdr
700
L(AV)
DS
= 33 W; measured in a
= 50 V;
© NXP B.V. 2010. All rights reserved.
800
001aal081
f (MHz)
900
IMD
0
−10
−20
−30
−40
−50
(dBc)
shdr
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