BLF7G22LS-130,112 NXP Semiconductors, BLF7G22LS-130,112 Datasheet - Page 15

• Manufacturer Part Number: BLF7G22LS-130,112
• Description: TRANSISTOR PWR LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G22LS-130,112

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current - Test: 950mA
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063501112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF881_BLF881S
Product data sheet
Document ID
BLF881_BLF881S v.3
Modifications:
BLF881_BLF881S v.2
BLF881_BLF881S v.1
Revision history
Table 9.
Acronym
CW
CCDF
DVB
DVB-T
ESD
HF
IMD3
LDMOS
LDMOST
OFDM
PAR
PEP
RF
TTF
UHF
VSWR
Release date
20101207
20100210
20091210
•
Table 6 on page
Abbreviations
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Preliminary data sheet
3: In the conditions column of V
Rev. 3 — 7 December 2010
Description
Continuous Wave
Complementary Cumulative Distribution Function
Digital Video Broadcast
Digital Video Broadcast - Terrestrial
ElectroStatic Discharge
High Frequency
Third order InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Peak-to-Average power Ratio
Peak Envelope Power
Radio Frequency
Time To Failure
Ultra High Frequency
Voltage Standing-Wave Ratio
Change notice
-
-
-
GS(th)
BLF881; BLF881S
the value of I
UHF power LDMOS transistor
BLF881_BLF881S v.2
BLF881_BLF881S v.1
-
Supersedes
D
has been changed
© NXP B.V. 2010. All rights reserved.
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