BLF6G20-110,112 NXP Semiconductors, BLF6G20-110,112 Datasheet - Page 78

• Manufacturer Part Number: BLF6G20-110,112
• Description: IC BASESTATION FINAL SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-110,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 1.93GHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 29A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 25W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061128112; BLF6G20-110; BLF6G20-110

RF
2.2-GHz basestations (continued)
7
Product
BLM6G22-30
BLF6G21-15
BLF6G21-6
BLF3G22-30
BLF3G21-30
BLF3G21-6
BLF1822-10
BLF2043
BLF2043F
Package
SOT834-1
SOT538A
SOT538A
SOT608A
SOT467C
SOT538A
SOT467C
SOT538A
SOT467C
I/O
I/O
Mode of operation
W-CDMA / UMTS
CW
CW
2-Tone
PHS class A
W-CDMA / UMTS
2-Tone
PHS class A
2-Tone
PHS class A
CW
CW
CW
2100 - 2200
800-4000
800-4000
2000 - 2200
HF - 2200
HF - 2200
HF - 2200
HF - 2200
HF - 2200
6.5
15
30
10
30
12
12
10
2
6
9
6
2
TBD
TBD
13.5
13.5
27
14
16
15
16
16
13
12
12
11
10
10
34
20
21
35
20
35
20
40
40
30
-50
-45
-45
-38
-26
-23
-52
-48
-48
-42
-75
-75
TBD
TBD
1.85
1.60
10
2
5
9
5