BLF6G20-110,112 NXP Semiconductors, BLF6G20-110,112 Datasheet - Page 28

• Manufacturer Part Number: BLF6G20-110,112
• Description: IC BASESTATION FINAL SOT502A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-110,112

• Package / Case: SOT502A
• Transistor Type: LDMOS
• Frequency: 1.93GHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 29A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 25W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061128112; BLF6G20-110; BLF6G20-110

Audio amplifiers
Class-AB audio amplifiers (continued)

Product
TFA9800J
TFA9841J
TFA9842J
TFA9842AJ
TFA9842BJ
TFA9843J
TFA9843BJ
TFA9843AJ
Description
2x6 W
SE 7 W
SE 2x7 W
SE 2x7 W
SE 2x7 W
SE 2x15 W
SE 2x15 W
SE 2x15 W
Output
stage
SE
SE/BTL 9- 26
SE/BTL 9- 26
SE
SE
SE/BTL 9- 26
SE/BTL 9- 26
SE
Vp (V)
8.5 - 18
9- 28
9- 26
9- 28
Po (W) 10%
THD
2x6 W
(4Ω,15V)
7.5 W
(4 Ω, 16 V)
2x7.5 W
(4 Ω,16V)
2x7.5 W
(4Ω,16V)
2x7.5 W
(4Ω,16V)
2x15 W
(4 Ω, 22 V)
2x15 W
(4 Ω, 22 V)
2x15 W
(4 Ω, 22 V)
DC Vol
80 dB
80 dB
THD
1 kHz
0.10%
0.10%
0.1/
0.05%
0.1/
0.05%
0.10%
0.1/
0.05%
0.1/
0.05%
0.1/
0.05%
Iq (mA)
@ Vp typ
40
40
60
60
60
60
60
60
Gain
(dB)
26/32
26/32
26/32
20
26
26
26
26
SVRR
(dB)
>48
60
60
60
60
60
60
60
X-talk
(dB)
>40
60
60
60
60
60
60
DC offset
(mV)
<200
<200
<200
Vnoise (μV)
(20 - 20 kHz)
150/200
150/200
150/200
150
150
150
150
50
Rth j-c
(k/W)
>52
3.8
2
2
2
2
2
2
Mute Package
•
•
•
•
•
•
•
•
SIL9LC
SIL9LC
SIL9LC
SIL9LC
SIL9LC
SIL9LC
SIL9LC
SIL9LC
Remarks
Equal phase
Equal phase