BLF6G20LS-75,112 NXP Semiconductors, BLF6G20LS-75,112 Datasheet - Page 62
![IC BASESTATION FINAL SOT502B](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G20LS-75,112
Manufacturer Part Number
BLF6G20LS-75,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Specifications of BLF6G20LS-75,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
1.93GHz
Gain
19dB
Voltage - Rated
65V
Current Rating
18A
Current - Test
550mA
Voltage - Test
28V
Power - Output
29.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.235 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
18 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060922112
BLF6G20LS-75
BLF6G20LS-75
BLF6G20LS-75
BLF6G20LS-75
RF
N-channel, dual-gate MOSFETs for switching
6
Product
With external bias
BF998
BF998R
BF998WR
Fully internal bias
BF1105
BF1105R
BF1105WR
Partly internal bias
BF904(A)
BF904(A)R
BF904(A)WR
BF909(A)
BF909(A)R
BF909(A)WR
BF1102(R)
BF1201
BF1201R
BF1201WR
BF1202
BF1202R
BF1202WR
Package
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT343
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
V
(V)
12
12
12
10
10
10
10
10
10
7
7
7
7
7
7
7
7
7
7
DS
(mA)
30
30
30
30
30
30
30
30
30
40
40
40
40
30
30
30
30
30
30
I
D
Min
12
12
12
12
11
11
11
2
2
2
8
8
8
8
8
8
8
8
8
(mA)
I
DSS
Max
18
18
18
16
16
16
13
13
13
20
20
20
20
19
19
19
16
16
16
Min
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
(p)GS
(V)
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
Max
-2.0
-2.0
-2.5
1
1
1
1
1
1
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
Min
21
21
22
25
25
25
22
22
22
36
36
36
36
23
23
23
25
25
25
Characteristics
(mS)
|Yfs|
Max
30
30
30
50
50
50
35
35
35
40
40
40
2.2
2.2
2.2
2.8
(pF)
Cis
Typ
2.1
2.1
2.1
2.2
2.2
2.2
3.6
3.6
3.6
2.6
2.6
2.6
1.7
1.7
1.7
(3)
(3)
(3)
(3)
1.2
1.2
1.2
1.6
1.05
1.05
1.05
0.85
0.85
0.85
Cos
(pF)
Typ
1.3
1.3
1.3
2.3
2.3
2.3
0.9
0.9
0.9
(2)
(2)
(2)
(2)
F @ 800
MHz
Typ
1.7
1.7
1.7
1.9
1.9
1.9
1.1
1.1
1.1
1
1
1
2
2
2
2
2
2
2
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