BLF6G20LS-75,112 NXP Semiconductors, BLF6G20LS-75,112 Datasheet - Page 28
![IC BASESTATION FINAL SOT502B](/photos/5/63/56376/568-2-ldmost_sot-502b_sml.jpg)
BLF6G20LS-75,112
Manufacturer Part Number
BLF6G20LS-75,112
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Specifications of BLF6G20LS-75,112
Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
1.93GHz
Gain
19dB
Voltage - Rated
65V
Current Rating
18A
Current - Test
550mA
Voltage - Test
28V
Power - Output
29.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.235 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
18 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060922112
BLF6G20LS-75
BLF6G20LS-75
BLF6G20LS-75
BLF6G20LS-75
Audio amplifiers
Class-AB audio amplifiers (continued)
Product
TFA9800J
TFA9841J
TFA9842J
TFA9842AJ
TFA9842BJ
TFA9843J
TFA9843BJ
TFA9843AJ
Description
2x6 W
SE 7 W
SE 2x7 W
SE 2x7 W
SE 2x7 W
SE 2x15 W
SE 2x15 W
SE 2x15 W
Output
stage
SE
SE/BTL 9- 26
SE/BTL 9- 26
SE
SE
SE/BTL 9- 26
SE/BTL 9- 26
SE
Vp (V)
8.5 - 18
9- 28
9- 26
9- 28
Po (W) 10%
THD
2x6 W
(4Ω,15V)
7.5 W
(4 Ω, 16 V)
2x7.5 W
(4 Ω,16V)
2x7.5 W
(4Ω,16V)
2x7.5 W
(4Ω,16V)
2x15 W
(4 Ω, 22 V)
2x15 W
(4 Ω, 22 V)
2x15 W
(4 Ω, 22 V)
DC Vol
80 dB
80 dB
THD
1 kHz
0.10%
0.10%
0.1/
0.05%
0.1/
0.05%
0.10%
0.1/
0.05%
0.1/
0.05%
0.1/
0.05%
Iq (mA)
@ Vp typ
40
40
60
60
60
60
60
60
Gain
(dB)
26/32
26/32
26/32
20
26
26
26
26
SVRR
(dB)
>48
60
60
60
60
60
60
60
X-talk
(dB)
>40
60
60
60
60
60
60
DC offset
(mV)
<200
<200
<200
Vnoise (μV)
(20 - 20 kHz)
150/200
150/200
150/200
150
150
150
150
50
Rth j-c
(k/W)
>52
3.8
2
2
2
2
2
2
Mute Package
•
•
•
•
•
•
•
•
SIL9LC
SIL9LC
SIL9LC
SIL9LC
SIL9LC
SIL9LC
SIL9LC
SIL9LC
Remarks
Equal phase
Equal phase