BLF6G10LS-135R,118 NXP Semiconductors, BLF6G10LS-135R,118 Datasheet - Page 6

IC BASESTATION FINAL SOT502B

BLF6G10LS-135R,118

Manufacturer Part Number
BLF6G10LS-135R,118
Description
IC BASESTATION FINAL SOT502B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G10LS-135R,118

Package / Case
SOT502B
Transistor Type
LDMOS
Frequency
871.5MHz
Gain
21dB
Voltage - Rated
65V
Current Rating
32A
Current - Test
950mA
Voltage - Test
28V
Power - Output
26.5W
Minimum Operating Temperature
- 55 C
Mounting Style
Screw
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.23 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061247118
BLF6G10LS-135R /T3
BLF6G10LS-135R /T3
NXP Semiconductors
Table 8.
See
[1]
[2]
BLF6G10-135RN_10LS-135RN_2
Product data sheet
Component
C1, C3, C10, C14, C17 multilayer ceramic chip capacitor
C2, C4, C5
C6, C7
C8, C9, C12, C13
C11, C15
C16
C18, C19, C20
L1
Q1
R1, R2, R3
Fig 7.
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
Figure 6
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε
See
The drawing is not to scale.
Component layout
List of components
and
Table 8
Figure
for list of components.
7.
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
ferrite SMD bead
BLF6G10LS-135RN
SMD resistor
R1
C1
C3
800 -1000 MHz
C2
V1.0
IN
Rev. 02 — 21 January 2010
C4
C5
R2
Q1
Value
68 pF
8.2 pF
10 pF
100 nF
4.7 μF; 50 V
3.0 pF
220 μF; 63 V
9.1 Ω; 0.1 W
C6
C7
800 -1000 MHz
C8
OUT
V1.0
BLF6G10(LS)-135RN
C9
C12
[1]
[1]
[1]
[2]
[1]
C10 C11
C13
Remarks
solder vertically
solder vertically
solder vertically
Vishay or capacitor of same quality.
solder vertically
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
C14
C15
C18
C19
r
= 3.5 and thickness = 0.76 mm.
Power LDMOS transistor
L1
© NXP B.V. 2010. All rights reserved.
R3
C16
C20
C17
001aah870
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