BLF6G24-12,112 NXP Semiconductors, BLF6G24-12,112 Datasheet - Page 30

• Manufacturer Part Number: BLF6G24-12,112
• Description: TRANSISTOR PWR LDMOS SOT975
• Manufacturer: NXP Semiconductors

Specifications of BLF6G24-12,112

• Transistor Type: LDMOS
• Frequency: 2GHz ~ 2.2GHz
• Gain: 17dB
• Power - Output: 40W
• Package / Case: SOT975B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063603112

1.6 Automotive & Industrial
Note: looking for GPS? See chapter 1.5.1 Handset.
1.6.1 Active antenna
Application diagram
Recommended products
32
Function
Function
Function
Product highlight:
BGU7003 SiGe:C MMIC
Manufactured in NXP’s latest SiGe:C process, this high-frequency
RF MMIC delivers high-quality reception with extended battery life.
It is a cost-effective, silicon based alternative to GaAs devices, and
offers higher integration and easier design-in than discrete bipolar
transistors.
2
3
1
st
nd
rd
LNA
LNA
LNA
stage
stage
stage
NXP Semiconductors RF Manual 14
Product
Product
Product
RF transistor
MMIC
MMIC
MMIC
antenna
Low noise wideband
wideband amplifier
General purpose
SiGe:C transistor
SiGe:C MMIC
amplifier
th
stage
LNA
edition
1
st
Package
SOT343R
SOT343R
Package
SOT363
SOT363
SOT363
SOT363
Package
SOT343F
SOT891
stage
LNA
2
nd
stage
LNA
Type
BGA2001
BGA2003
Type
BGM1013
BGM1011
BGA2715
BGA2748
Type
BFU725F/N1
BGU7003
3
rd
Features
`
`
`
`
`
`
Low-noise, high-gain microwave MMIC
Maximum stable gain = 19 dB at 1.575 GHz
110-GHz f
Optimized performance at low (5-mA) supply current
Extemely thin, leadless 6-pin SOT891 package
Integrated biasing and shutdown for easy integration
CHIPSET
T
brb215
-Silicon Germanium technology