BLF6G27-10G,112 NXP Semiconductors, BLF6G27-10G,112 Datasheet - Page 6
![IC WIMAX 2.7GHZ 2-LDMOST](/photos/5/64/56475/2-ldmost_sot957a_pkg_sml.jpg)
BLF6G27-10G,112
Manufacturer Part Number
BLF6G27-10G,112
Description
IC WIMAX 2.7GHZ 2-LDMOST
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G27-10G112.pdf
(15 pages)
Specifications of BLF6G27-10G,112
Package / Case
SOT957C
Transistor Type
LDMOS
Frequency
2.5GHz
Gain
19dB
Voltage - Rated
65V
Current Rating
3.5A
Current - Test
130mA
Voltage - Test
28V
Power - Output
2W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.256 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
3.5 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061845112
BLF6G27-10G
BLF6G27-10G
BLF6G27-10G
BLF6G27-10G
NXP Semiconductors
BLF6G27-10_BLF6G27-10G
Product data sheet
Fig 6.
Fig 8.
(dB)
(dB)
G
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
p
24
22
20
18
16
14
25
23
21
19
17
15
10
10
V
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Power gain and drain efficiency as function of
load power; typical values
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Power gain as a function of load power;
typical values
1
DS
1
DS
= 28 V; I
= 28 V; I
G
D
p
Dq
Dq
= 130 mA; f = 2600 MHz;
= 130 mA; single carrier IS-95;
(2)
(1)
(3)
1
1
P
L(AV)
P
L
(W)
(W)
All information provided in this document is subject to legal disclaimers.
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Rev. 3 — 28 February 2011
10
10
50
40
30
20
10
0
(%)
D
BLF6G27-10; BLF6G27-10G
Fig 7.
Fig 9.
ACPR
(dBc)
(W)
P
(1) Low frequency component
(2) High frequency component
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
0.16
0.12
0.08
0.04
i
35
45
55
65
75
0
10
10
V
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
Adjacent channel power ratio as a function of
load power; typical values
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Input power as a function of load power;
typical values
1
DS
1
DS
ACPR
ACPR
ACPR
= 28 V; I
= 28 V; I
885k
1500k
1980k
Dq
Dq
WiMAX power LDMOS transistor
(2)
(1)
= 130 mA; f = 2600 MHz;
= 130 mA; single carrier IS-95;
1
1
(3)
(2)
(1)
P
L(AV)
P
L
(W)
© NXP B.V. 2011. All rights reserved.
(1)
(2)
(2)
(1)
(W)
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10
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