BLF521,112 NXP Semiconductors, BLF521,112 Datasheet

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BLF521,112

Manufacturer Part Number
BLF521,112
Description
TRANSISTOR UHF PWR DMOS SOT172D
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF521,112

Transistor Type
N-Channel
Frequency
500MHz
Gain
13dB
Voltage - Rated
40V
Current Rating
1A
Current - Test
10mA
Voltage - Test
12.5V
Power - Output
2W
Package / Case
SOT-172D
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
1A
Drain Source Voltage (max)
40V
Output Power (max)
2W
Power Gain (typ)@vds
13@12.5VdB
Frequency (max)
500MHz
Package Type
CRDB
Pin Count
4
Forward Transconductance (typ)
0.135S
Drain Source Resistance (max)
4000@15Vmohm
Input Capacitance (typ)@vds
5.3@12.5VpF
Output Capacitance (typ)@vds
7.8@12.5VpF
Reverse Capacitance (typ)
1.8@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Surface Mount
Mode Of Operation
CW Class-B
Number Of Elements
1
Power Dissipation (max)
10000mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
933978500112
Product specification
Supersedes data of 1998 Jan 07
DATA SHEET
BLF521
UHF power MOS transistor
DISCRETE SEMICONDUCTORS
M3D079
2003 Sep 02

Related parts for BLF521,112

BLF521,112 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BLF521 UHF power MOS transistor Product specification Supersedes data of 1998 Jan 07 M3D079 2003 Sep 02 ...

Page 2

Philips Semiconductors UHF power MOS transistor FEATURES High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch Designed for broadband operation. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in ...

Page 3

Philips Semiconductors UHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL V drain-source voltage DS V gate-source voltage GS I drain current (DC total power dissipation tot T storage temperature stg ...

Page 4

Philips Semiconductors UHF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS I drain-source leakage current DSS I gate-source leakage current GSS V gate-source threshold voltage GSth g forward transconductance ...

Page 5

Philips Semiconductors UHF power MOS transistor 15 handbook, halfpage T.C (mV/ Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. 5 handbook, halfpage R ...

Page 6

Philips Semiconductors UHF power MOS transistor 5 handbook, halfpage C rs (pF MHz. GS Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION ...

Page 7

Philips Semiconductors UHF power MOS transistor 20 handbook, halfpage G p (dB 0.5 1.5 Class-B operation 12 mA 9.5 j12. ...

Page 8

Philips Semiconductors UHF power MOS transistor List of components class-AB test circuit (see Fig.12) COMPONENT DESCRIPTION C1, C5, C8, multilayer ceramic chip capacitor; note 1 C15 C2, C13 film dielectric trimmer C3 multilayer ceramic chip capacitor; note 2 C4 film ...

Page 9

Philips Semiconductors UHF power MOS transistor andbook, full pagewidth handbook, full pagewidth strap strap mounting screws (6x) The circuit and components are situated on one side of the printed-circuit board, the other side being fully metallized, to ...

Page 10

Philips Semiconductors UHF power MOS transistor 50 handbook, halfpage 100 100 200 300 Class-B operation 12 mA 274 ; P ...

Page 11

Philips Semiconductors UHF power MOS transistor BLF521 scattering parameters mA.; note (MHz 1.00 1.6 10 1.00 3.2 20 1.00 6.4 30 1.00 9.6 ...

Page 12

Philips Semiconductors UHF power MOS transistor PACKAGE OUTLINE Studless ceramic package; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 3.71 3.31 0.89 mm 2.89 3.04 0.63 0.13 0.035 0.146 inches 0.114 ...

Page 13

Philips Semiconductors UHF power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...

Page 14

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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