ATF-36077-TR1 Avago Technologies US Inc., ATF-36077-TR1 Datasheet - Page 2

• Manufacturer Part Number: ATF-36077-TR1
• Description: IC PHEMT 2-18GHZ ULT LN 77-SMD
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-36077-TR1

• Transistor Type: pHEMT FET
• Frequency: 12GHz
• Gain: 12dB
• Voltage - Rated: 3V
• Current Rating: 45mA
• Noise Figure: 0.5dB
• Current - Test: 10mA
• Voltage - Test: 1.5V
• Power - Output: 5dBm
• Package / Case: 4-SMD (77 Pack)
• Power Dissipation Pd: 180mW
• No. Of Pins: 4
• Configuration: Single Dual Source
• Gate-source Voltage (max): 3V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

ATF-36077 Absolute Maximum Ratings
ATF-36077 Electrical Specifications,
T
Note:
1. Measured in a fixed tuned environment with Γ source = 0.54 at 156°; Γ load = 0.48 at 167°.
ATF-36077 Characterization Information,
T
Note:
2. See noise parameter table.
2
C
C
= 25°C, Z
= 25°C, Z
V
Symbol
GS 10 mA
Symbol
Symbol
S
V
P
P
NF
G
12 off
T
V
in max
p 10 %
V
V
1dB
T
NF
g
I
G
P
I
STG
dss
GS
GD
A
DS
D
ch
m
T
A
O
O
= 50 Ω
= 50 Ω
Noise Figure (Tuned Circuit)
Gain at Noise Figure (Tuned Circuit)
Reverse Isolation
Output Power at 1 dB Gain Compression
Gate to Source Voltage for I
Drain – Source Voltage
Gate – Source Voltage
Gate-Drain Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Noise Figure
Gain at NF
Transconductance
Saturated Drain Current
Pinch-off Voltage
,
,
V
V
ds
ds
Parameter
Parameters and Test Conditions
= 1.5 V, I
= 1.5 V, I
[1]
[1]
ds
ds
Parameters and Test Conditions
= 10 mA, (unless otherwise noted).
= 10 mA, (unless otherwise noted).
[3]
DS
= 10 mA
Units
dBm
mW
mA
°C
°C
V
V
V
V
DS
= 1.5 V, I
V
V
DS
DS
= 1.5 V, V
= 1.5 V, V
DS
Maximum
-65 to 150
Absolute
= 10% of I
f = 12.0 GHz
f = 12.0 GHz
-3.5
180
+10
150
I
+3
-3
dss
f = 12 GHz, V
GS
GS
[1]
= 0 V
= 0 V
dss
DS
= 1.5 V, V
Units
mA
mS
dB
dB
V
Thermal Resistance
Notes:
1. Operation of this device above any one of
2. Measured at P
3. Derate at 16.7 mW/°C for T
these parameters may cause permanent
damage.
f = 12 GHz
f = 12 GHz
f = 12 GHz
V
DS
f = 4 GHz
f = 4 GHz
f = 4 GHz
GS
= 1.5 V
= -2 V
Min.
11.0
-1.0
50
15
diss
= 15 mW and T
[2,3]
-0.35
Units
dBm
dBm
12.0
Typ.
0.5
55
25
dB
dB
dB
dB
dB
: θ
V
ch-c
C
> 139°C.
= 60°C/W
-0.15
0.3
Max.
-0.2
ch
Typ.
0.6
0.5
45
17
12
14
5
5
= 100°C.
[2]