ATF-501P8-TR1 Avago Technologies US Inc., ATF-501P8-TR1 Datasheet - Page 2

• Manufacturer Part Number: ATF-501P8-TR1
• Description: IC PHEMT 2GHZ 4.5V 280MA 8-LPCC
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-501P8-TR1

• Gain: 15dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 7V
• Current Rating: 1A
• Noise Figure: 1dB
• Current - Test: 280mA
• Voltage - Test: 4.5V
• Power - Output: 29dBm
• Package / Case: 8-LPCC
• Drain Source Voltage Vds: 4.5V
• Continuous Drain Current Id: 1A
• Power Dissipation Pd: 3.5W
• Noise Figure Typ: 1dB
• Rf Transistor Case: LPCC
• No. Of Pins: 8
• Frequency Max: 6GHz
• Frequency Min: 50MHz
• Drain Current Idss Max: 280mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ATF-501P8 Absolute Maximum Ratings
I
I
P
P
T
T
θ
Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA
Figure 4. Gain.
Notes:
5. Distribution data sample size is 300 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
6. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have
2
Symbol
V
V
V
DS
GS
100
Figure 1. Typical IV curve (Vgs = 0.01V) per step.
CH
diss
in max.
STG
80
60
40
20
ch_b
800
700
600
500
400
300
200
100
DS
GS
GD
0
13
0
nominal values anywhere between the upper and lower limits.
been de-embedded from actual measurements.
0
Cpk=1.61
Stdev=0.33
1
–3 Std
14
2
GAIN (dB)
Parameter
Drain–Source Voltage
Gate–Source Voltage
Gate Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
Vds (V)
15
3
Vgs=0.7V
Vgs=0.65V
Vgs=0.6V
Vgs=0.55V
Vgs=0.5V
4
+3 Std
16
[2]
5
[2]
17
[4]
6
[2]
[2]
[3]
[1]
Figure 2. P1dB.
Figure 5. OIP3.
120
100
100
80
60
40
20
80
60
40
20
0
0
27.5
42
Cpk=1.76
Stdev=0.3
Cpk=1.1
Stdev=0.87
Units
V
V
V
A
mA
W
dBm
°C
°C
°C/W
–3 Std
43
28
–3 Std
44
28.5
45
P1dB (dBm)
OIP3 (dBm)
29
46
47
Absolute
Maximum
7
-5 to 0.8
-5 to 1
1
12
3.5
30
150
-65 to 150
23
29.5
+3 Std
[5,6]
+3 Std
48
30
49
30.5
50
Notes:
1. Operation of this device in excess of
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureT
4. Channel-to-board
Figure 3. PAE.
120
100
80
60
40
20
0
45
any one of these parameters may cause
permanent damage.
25°C. Derate 43.5 mW/°C for T
measured using 150°C Liquid Crystal
Measurement method.
Cpk=1.51
Stdev=3.38
–3 Std
55
PAE (%)
65
thermal
+3 Std
75
B
> 69.5°C.
resistance
85
B
is