ATF-511P8-TR1 Avago Technologies US Inc., ATF-511P8-TR1 Datasheet - Page 5

IC PHEMT 2GHZ 4.5V 200MA 8-LPCC

ATF-511P8-TR1

Manufacturer Part Number
ATF-511P8-TR1
Description
IC PHEMT 2GHZ 4.5V 200MA 8-LPCC
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-511P8-TR1

Gain
14.8dB
Transistor Type
pHEMT FET
Frequency
2GHz
Voltage - Rated
7V
Current Rating
1A
Noise Figure
1.4dB
Current - Test
200mA
Voltage - Test
4.5V
Power - Output
30dBm
Package / Case
8-LPCC
Power Dissipation Pd
3W
Rf Transistor Case
LPCC
No. Of Pins
8
Frequency Max
6GHz
Noise Figure Typ
1.4dB
Frequency Min
50MHz
Continuous Drain Current Id
16.4µA
Drain Current Idss Max
200mA
Drain Source Voltage Vds
4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-511P8-TR1
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Part Number:
ATF-511P8-TR1G
Manufacturer:
AVAGO
Quantity:
10 000
5
ATF-511P8 Typical Performance Curves (at 25°C unless specified otherwise)
Tuned for Optimal OIP3 at 4.5V 200 mA
Note:
Bias current for the above charts are quiescent
conditions. Actual level may increase or
decrease depending on amount of RF drive.
Figure 8. OIP3 vs. I
Figure 14. PAE vs. I
Figure 11. P1dB vs.
50
45
40
35
30
25
20
15
10
80
70
60
50
40
30
20
10
35
30
25
20
15
10
0
50
50
50
150
150
150
4.5 V
4 V
3 V
250
250
250
DS
I DS (mA)
I DS (mA)
I DS (mA)
DS
I DS
and V
and V
and V
350
350
350
DS
DS
DS
at 2 GHz.
at 2 GHz.
at 900 MHz.
450
4.5 V
4 V
3 V
450
450
4.5 V
4 V
3 V
550
550
550
Figure 9. OIP3 vs. I
Figure 12. Gain vs. I
Figure 15. PAE vs. I
50
45
40
35
30
25
20
15
10
17
16
15
14
13
12
11
10
80
70
60
50
40
30
20
10
0
50
50
50
150
150
150
4.5 V
4 V
3 V
250
250
250
DS
I DS (mA)
I DS (mA)
I DS (mA)
DS
DS
and V
and V
and V
350
350
350
DS
DS
DS
at 900 MHz.
at 900 MHz.
at 2 GHz.
450
450
450
4.5 V
4 V
3 V
4.5 V
4 V
3 V
550
550
550
Figure 16. OIP3 vs. Temp and Freq.
Figure 10. P1dB vs. I
Figure 13. Gain vs. I
50
45
40
35
30
25
20
35
30
25
20
15
10
20
19
18
17
16
15
14
13
0.5
50
50
1
150
150
1.5
FREQUENCY (GHz)
250
250
I DS (mA)
I DS (mA)
DS
2
DS
and V
and V
2.5
350
350
DS
DS
3
at 900 MHz.
at 2 GHz.
450
450
4.5 V
4 V
3 V
-40 °C
25 °C
85 °C
4.5 V
4 V
3 V
3.5
550
550
4

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