ATF-511P8-TR1 Avago Technologies US Inc., ATF-511P8-TR1 Datasheet - Page 2

• Manufacturer Part Number: ATF-511P8-TR1
• Description: IC PHEMT 2GHZ 4.5V 200MA 8-LPCC
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-511P8-TR1

• Gain: 14.8dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 7V
• Current Rating: 1A
• Noise Figure: 1.4dB
• Current - Test: 200mA
• Voltage - Test: 4.5V
• Power - Output: 30dBm
• Package / Case: 8-LPCC
• Power Dissipation Pd: 3W
• Rf Transistor Case: LPCC
• No. Of Pins: 8
• Frequency Max: 6GHz
• Noise Figure Typ: 1.4dB
• Frequency Min: 50MHz
• Continuous Drain Current Id: 16.4µA
• Drain Current Idss Max: 200mA
• Drain Source Voltage Vds: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2
ATF-511P8 Absolute Maximum Ratings
I
I
P
P
T
T
150
120
Notes:
6. Distribution data sample size is 400 samples taken from 4 different wafers and 3 different lots.
7. Measurements are made on production test board, which represents a trade-off between optimal
Symbol
V
V
V
θ
DS
GS
90
60
30
CH
STG
Figure 4. Gain
LSL = 13.5, Nominal = 14.8, USL = 16.5.
diss
in max.
ch_b
DS
GS
GD
0
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
13
1000
Figure 1. Typical I-V Curves
(V gs = 0.1 per step).
900
800
700
600
500
400
300
200
100
0
0
-3 Std
14
2
Parameter
Drain–Source Voltage
Gate–Source Voltage
Gate Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
GAIN (dB)
15
V
DS
4
(V)
+3 Std
Cpk = 1.4
Stdev = 0.31
[2]
16
[4]
6
[2]
0.7 V
0.6 V
0.5 V
0.8 V
[5]
[2]
[2]
[3]
17
8
[1]
Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA
240
200
160
120
Figure 2. OIP3
LSL = 38.5, Nominal = 41.7.
160
120
80
40
Figure 5. PAE
LSL = 52, Nominal = 68.9.
80
40
0
0
35
52
Units
V
V
V
A
mA
W
dBm
°C
°C
°C/W
57
38
62
-3 Std
-3 Std
OIP3 (dBm)
PAE (%)
41
67
Absolute
Maximum
7
-5 to 1
-5 to 1
1
46
3
+30
150
-65 to 150
33
72
+3 Std
Cpk = 1.66
Stdev = 0.6
+3 Std
Cpk = 3.03
Stdev = 1.85
44
77
47
82
Notes:
1. Operation of this device in excess of any one
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureT
4. With 10 Ohm series resistor in gate supply
5. Channel-to-board thermal resistance
6. Device can safely handle +30dBm RF Input
200
160
120
Figure 3. P1dB
LSL = 28.5, Nominal = 30.
80
40
of these parameters may cause permanent
damage.
Derate 30 mW/°C for T
and 3:1 VSWR.
measured using 150°C Liquid Crystal
Measurement method.
Power provided I
P
0
28
1dB
drive level is bias circuit dependent.
29
P1dB (dBm)
GS
limited to 46mA. I
-3 Std
B
> 50°C.
[6,7]
30
Cpk = 3.24
Stdev = 0.15
+3 Std
B
GS
is 25°C.
at
31