ATF-521P8-TR2 Avago Technologies US Inc., ATF-521P8-TR2 Datasheet - Page 6

• Manufacturer Part Number: ATF-521P8-TR2
• Description: IC PHEMT 2GHZ 4.5V 200MA 8-LPCC
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-521P8-TR2

• Gain: 17dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 7V
• Current Rating: 500mA
• Noise Figure: 1.5dB
• Current - Test: 200mA
• Voltage - Test: 4.5V
• Power - Output: 26.5dBm
• Package / Case: 8-LPCC
• Drain Source Voltage Vds: 4.5V
• Continuous Drain Current Id: 500mA
• Power Dissipation Pd: 1.5W
• Noise Figure Typ: 1.5dB
• Rf Transistor Case: LPCC
• No. Of Pins: 8
• Frequency Max: 6GHz
• Frequency Min: 50MHz
• Drain Current Idss Max: 200mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ATF-521P8 Typical Performance Curves,
Tuned for Optimal OIP3
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase depending on amount of RF drive.
6
Figure 20. OIP3 vs. Temp and Freq
tuned for optimal OIP3 at 4.5V, 200 mA.
Figure 23. PAE vs Temp and Freq
tuned for optimal OIP3 at 4.5V, 200 mA.
Figure 17. PAE @ P1dB vs. I
at 2 GHz.
70
60
50
40
30
20
10
70
60
50
40
30
20
10
50
45
40
35
30
25
20
15
0
100
0.5
0.5
1
150
1
1.5
1.5
FREQUENCY (GHz)
FREQUENCY (GHz)
200
4.5V
4V
3V
I
2
2
dq
250
(mA)
2.5
2.5
dq
300
and V
3
3
85°C
25°C
-40°C
85°C
25°C
-40°C
350
3.5
3.5
ds
400
4
4
continued (at 25°C unless specified otherwise)
Figure 18. PAE @ P1dB vs. I
at 900 MHz.
Figure 21. P1dB vs. Temp and Freq
tuned for optimal OIP3 at 4.5V, 200 mA.
70
60
50
40
30
20
10
29
27
25
23
21
19
17
15
100
0.5
1
150
4.5V
4V
3V
1.5
FREQUENCY (GHz)
200
I
2
dq
250
(mA)
2.5
dq
300
and V
3
85°C
25°C
-40°C
350
3.5
ds
400
4
Figure 22. Gain vs. Temp and Freq
tuned for optimal OIP3 at 4.5V, 200 mA.
Figure 19. PAE @ P1dB vs. I
at 3.9 GHz.
50
45
40
35
30
25
20
15
10
20
15
10
5
0
100
0.5
1
150
1.5
4.5V
4V
3V
FREQUENCY (GHz)
200
I
dq
2
250
(mA)
2.5
dq
300
and V
3
85°C
25°C
-40°C
350
3.5
ds
400
4