ATF-521P8-TR2 Avago Technologies US Inc., ATF-521P8-TR2 Datasheet - Page 4

• Manufacturer Part Number: ATF-521P8-TR2
• Description: IC PHEMT 2GHZ 4.5V 200MA 8-LPCC
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-521P8-TR2

• Gain: 17dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 7V
• Current Rating: 500mA
• Noise Figure: 1.5dB
• Current - Test: 200mA
• Voltage - Test: 4.5V
• Power - Output: 26.5dBm
• Package / Case: 8-LPCC
• Drain Source Voltage Vds: 4.5V
• Continuous Drain Current Id: 500mA
• Power Dissipation Pd: 1.5W
• Noise Figure Typ: 1.5dB
• Rf Transistor Case: LPCC
• No. Of Pins: 8
• Frequency Max: 6GHz
• Frequency Min: 50MHz
• Drain Current Idss Max: 200mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RF Input
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line
tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a Maury load pull system at 4.5V, 200
mA quiesent bias:
Freq
(GHz)
0.9
2
2.4
3.9
Freq
(GHz)
0.9
2
2.4
3.9
4
1.5 pF
2.2 µF
Mag
0.413
0.368
0.318
0.463
Mag
0.587
0.614
0.649
0.552
Gamma Source
Gamma Source
Supply
Gate
12 nH
15 Ohm
1 pF
Ang (deg)
10.5
162.0
169.0
‑134.0
Ang (deg)
12.7
126.1
145.0
‑162.8
50 Ohm
.02 λ
110 Ohm
.03 λ
Mag
0.314
0.538
0.566
0.495
Mag
0.613
0.652
0.682
0.670
Gamma Load
Gamma Load
DUT
Optimum OIP3
Ang (deg)
179.0
‑176.0
‑169.0
‑159.0
Optimum P1dB
Ang (deg)
‑172.1
‑172.5
‑171.5
‑151.2
110 Ohm
.03 λ
50 Ohm
.02 λ
2.2 µF
OIP3
(dBm)
42.7
42.5
42.0
40.3
OIP3
(dBm)
39.1
39.5
40.0
38.1
Supply
Drain
1.5 pF
47 nH
3.9 nH
Gain
(dB)
16.0
15.8
14.1
9.6
Gain
(dB)
14.5
12.9
12.0
9.6
RF Output
P1dB
(dBm)
27.0
27.5
27.4
27.3
P1dB
(dBm)
29.3
29.3
29.4
27.9
PAE
(%)
54.0
55.3
53.5
43.9
PAE
(%)
49.6
49.5
46.8
39.1