ATF-33143-TR2G Avago Technologies US Inc., ATF-33143-TR2G Datasheet - Page 5

• Manufacturer Part Number: ATF-33143-TR2G
• Description: IC PHEMT 1.9GHZ 80MA LN SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-33143-TR2G

• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 15dB
• Voltage - Rated: 5.5V
• Current Rating: 305mA
• Noise Figure: 0.5dB
• Current - Test: 80mA
• Voltage - Test: 4V
• Power - Output: 22dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Channel Type: N
• Configuration: Single Dual Source
• Gate-source Voltage (max): 5V
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 4 +Tab
• Package Type: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ATF-33143 Typical Performance Curves,
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 4V 80 mA bias. This circuit represents a trade-off between
2. Quiescent drain current, I
5
Figure 12. F
Figure 14. F
V
Figure 16. OIP3, P
3.9 GHz.
DS
1.5
1.0
0.5
25
20
15
10
35
30
25
20
15
10
optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been de-
embedded from actual measurements.
frequency and dc bias point. At lower values of I
P
active biasing.
0
5
5
0
= 4V, I
1dB
0
0
0
and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
DS
min
min
20
= 80 mA.
2
2
80 mA
60 mA
vs. Frequency and Current at 4V.
and G
FREQUENCY (GHz)
FREQUENCY (GHz)
1dB
40
a
, NF and Gain vs. Bias
25C
-40C
85C
I
vs. Frequency and Temp at
DSQ
4
4
60
(mA)
6
6
DSQ
80
, is set with zero RF drive applied. As P
8
8
100
[1,2]
P
OIP3
Gain
NF
1dB
at
120
10
10
2.0
1.5
1.0
0.5
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
continued
dsq
the device is running closer to class B as power output approaches P
Figure 13. Associated Gain vs. Frequency and
Current at 4V.
Figure 17. OIP3, P
5.8 GHz.
Figure 15. P
V
DS
30
25
20
15
10
40
35
30
25
20
15
35
30
25
20
15
10
5
0
5
0
= 4V, I
0
0
0
DS
1dB
1dB
20
= 80 mA.
2
2000
, OIP3 vs. Frequency and Temp at
is approached, the drain current may increase or decrease depending on
FREQUENCY (GHz)
FREQUENCY (MHz)
1dB
40
, NF and Gain vs. Bias
I
DSQ
4
4000
60
(mA)
P
OIP3
1dB
6
80
6000
80 mA
60 mA
8
100
[1,2]
25C
-40C
85C
Gain
NF
at
8000
120
10
3
2
1
0
1dB
. This results in higher