ON5452,518 NXP Semiconductors, ON5452,518 Datasheet
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ON5452,518
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ON5452,518 Summary of contents
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PHK4NQ20T N-channel TrenchMOS standard level FET Rev. 02 — 15 January 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...
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... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S source 2 S source 3 S source 4 G gate 5 D drain 6 D drain 7 D drain 8 D drain 3. Ordering information Table 3. Ordering information Type number Package Name Description PHK4NQ20T SO8 plastic small outline package; 8 leads; body width 3 ...
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... NXP Semiconductors 120 I der (%) 100 Fig 1. Normalized continuous drain current as a function of solder point temperature Limit DSon ( −1 10 −2 10 −1 10 Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PHK4NQ20T_2 Product data sheet 03aa25 120 P der (%) ...
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... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-sp) junction to solder point R thermal resistance from th(j-a) junction to ambient th(j-sp) (K/W) δ = 0.5 10 0.1 0.05 0.02 1 0.01 single pulse −1 10 −2 10 −4 − Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration ...
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... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...
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... NXP Semiconductors − (A) min typ −2 10 −3 10 −4 10 −5 10 − Fig 5. Sub-threshold drain current as a function of gate-source voltage ( 150 ° Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values PHK4NQ20T_2 Product data sheet 03aa35 (A) max (V) GS Fig 6. Output characteristics: drain current as a function of drain-source voltage ...
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... NXP Semiconductors 400 3 DSon (mΩ) 300 200 4.5 V 100 Fig 9. Drain-source on-state resistance as a function of drain current; typical values ( Fig 11. Gate-source voltage as a function of gate charge; typical values PHK4NQ20T_2 Product data sheet 003aaa238 − (A) D Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature ...
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... NXP Semiconductors Fig 13. Source current as a function of source-drain voltage; typical values PHK4NQ20T_2 Product data sheet ( 150 °C 25 ° 0.2 0.4 0.6 0.8 All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 January 2010 PHK4NQ20T N-channel TrenchMOS standard level FET 003aaa240 1 ...
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... NXP Semiconductors 7. Package outline SO8: plastic small outline package; 8 leads; body width 3 pin 1 index 1 e DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.25 1.45 mm 1.75 0.25 0.10 1.25 0.010 0.057 inches 0.069 0.01 0.004 0.049 Notes 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...
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... Document ID Release date PHK4NQ20T_2 20100115 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. PHK4NQ20T-01 20030120 (9397 750 10773) PHK4NQ20T_2 ...
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... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...