ATF-58143-TR2G Avago Technologies US Inc., ATF-58143-TR2G Datasheet - Page 5

• Manufacturer Part Number: ATF-58143-TR2G
• Description: IC PHEMT 2GHZ 3V 30MA SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-58143-TR2G

• Gain: 16.5dB
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.5dB
• Current - Test: 30mA
• Voltage - Test: 3V
• Power - Output: 19dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Drain Source Voltage Vds: 3V
• Continuous Drain Current Id: 500mA
• Noise Figure Typ: 0.5dB
• Rf Transistor Case: SC-70
• Peak Reflow Compatible (260 C): Yes
• Reel Quantity: 10000
• Termination Type: SMD
• Frequency Min: 450MHz
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Gate-source Voltage: 0.51V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ATF-58143 Typical Performance Curves, continued
5
Figure 13. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 16. Gain vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
Note:
1. When plotting P1dB, the drain current was
allowed to vary dependent on the RF input power.
24
22
20
18
16
14
12
30
25
20
15
10
5
0
0
10
1
20
FREQUENCY (GHz)
25°C
-40°C
85°C
2
Idq (mA)
30
3
40
[1]
4
50
5
60
3 V
4 V
70
6
Figure 14. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
Figure 17. OIP3 vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
23
22
21
20
19
18
17
16
15
35
30
25
20
15
10
0
0
10
1
20
FREQUENCY (GHz)
2
Idq (mA)
30
3
40
4
50
[1]
60
25°C
-40°C
85°C
5
3 V
4 V
70
6
Figure 15. Fmin vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
Figure 18. P1dB vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
20.0
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
1.5
1.0
0.5
0
0
0
1
1
FREQUENCY (GHz)
FREQUENCY (GHz)
2
2
3
3
4
4
5
25°C
-40°C
85°C
5
25°C
-40°C
85°C
6
6