ATF-58143-TR2G Avago Technologies US Inc., ATF-58143-TR2G Datasheet - Page 3

IC PHEMT 2GHZ 3V 30MA SOT-343

ATF-58143-TR2G

Manufacturer Part Number
ATF-58143-TR2G
Description
IC PHEMT 2GHZ 3V 30MA SOT-343
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of ATF-58143-TR2G

Gain
16.5dB
Transistor Type
pHEMT FET
Frequency
2GHz
Voltage - Rated
5V
Current Rating
100mA
Noise Figure
0.5dB
Current - Test
30mA
Voltage - Test
3V
Power - Output
19dBm
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Drain Source Voltage Vds
3V
Continuous Drain Current Id
500mA
Noise Figure Typ
0.5dB
Rf Transistor Case
SC-70
Peak Reflow Compatible (260 C)
Yes
Reel Quantity
10000
Termination Type
SMD
Frequency Min
450MHz
Rohs Compliant
Yes
Filter Terminals
SMD
Gate-source Voltage
0.51V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATF-58143-TR2G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
ATF-58143 Electrical Specifications
T
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 3 wafers.
RFin
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and associated impedance matching circuit losses.
3
Symbol
Vgs
Vth
Idss
Gm
Igss
NF
Ga
OIP3
P1dB
A
= 25°C, RF parameters measured in a test circuit for a typical device
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure
Associated Gain
Output 3
Intercept Point
1dB Compressed
Output Power
0.6 dB loss
rd
Order
[1]
matching
[1]
[1]
input
[1]
28.2 + j9.4
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 4 mA
Vds = 3V, Vgs = 0V
gm = ∆Idss/∆Vgs;
∆Vgs = 0.75 – 0.7 = 0.05V
Vgd = Vgs = ‑3V
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 3V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 4V, Ids = 30 mA
Vds = 3V,
51 – j3.3
matching
output
0.7 dB loss
Units
V
V
µA
mmho
µA
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
RFout
Min.
0.4
0.18
230
15
29
Typ.
0.51
0.38
1
410
0.5
0.3
0.5
0.3
16.5
23.1
17.7
22.5
30.5
28.6
31.5
31.0
19
18
21
19
[2]
Max.
0.75
0.52
5
560
200
0.9
18.5

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