NE3503M04-T2-A CEL, NE3503M04-T2-A Datasheet - Page 3
![AMP HJ-FET 12GHZ SOT-343](/photos/5/64/56472/sot-343_pkg_sml.jpg)
NE3503M04-T2-A
Manufacturer Part Number
NE3503M04-T2-A
Description
AMP HJ-FET 12GHZ SOT-343
Manufacturer
CEL
Datasheet
1.NE3503M04-T2-A.pdf
(9 pages)
Specifications of NE3503M04-T2-A
Transistor Type
HFET
Frequency
12GHz
Gain
12dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.45dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
55 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
125 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
125
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
50
80
60
40
20
ASSOCIATED GAIN vs. DRAIN CURRENT
–2.0
0
0
0
f = 12 GHz
V
DS
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
= 2 V
5
Gate to Source Voltage V
50
Ambient Temperature T
Drain Current I
10
100
–1.0
125
15
150
D
(mA)
20
A
GS
(°C)
A
V
200
(V)
DS
= +25°C, unless otherwise specified)
25
= 2 V
G
NF
a
Data Sheet PG10456EJ03V0DS
min
250
30
0
16
14
12
10
8
6
4
2
0
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
2
Drain to Source Voltage V
4
6
Frequency f (GHz)
8
1.0
10
NF
G
a
min
12 14 16 18
DS
V
I
D
V
NE3503M04
DS
(V)
= 10 mA
GS
= 2 V
–0.2 V
–0.4 V
–0.6 V
= 0 V
2.0
20
25
20
15
10
5
0
3