NE3503M04-T2-A CEL, NE3503M04-T2-A Datasheet - Page 2
![AMP HJ-FET 12GHZ SOT-343](/photos/5/64/56472/sot-343_pkg_sml.jpg)
NE3503M04-T2-A
Manufacturer Part Number
NE3503M04-T2-A
Description
AMP HJ-FET 12GHZ SOT-343
Manufacturer
CEL
Datasheet
1.NE3503M04-T2-A.pdf
(9 pages)
Specifications of NE3503M04-T2-A
Transistor Type
HFET
Frequency
12GHz
Gain
12dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.45dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
55 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
125 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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RECOMMENDED OPERATING CONDITIONS (T
ELECTRICAL CHARACTERISTICS (T
2
Drain to Source Voltage
Drain Current
Input Power
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Parameter
Parameter
Symbol
Symbol
V
I
I
V
GS (off)
NF
P
GSO
g
G
DSS
I
DS
D
m
in
a
A
V
V
V
V
V
Data Sheet PG10456EJ03V0DS
= +25°C, unless otherwise specified)
GS
DS
DS
DS
DS
MIN.
1
5
−
= 2 V, V
= 2 V, I
= 2 V, I
= 2 V, I
= −3.0 V
D
D
D
Test Conditions
TYP.
GS
A
= 100
= 10 mA
= 10 mA, f = 12 GHz
10
2
−
= +25°C)
= 0 V
μ
A
MAX.
15
3
0
dBm
Unit
mA
V
MIN.
−0.2
11.0
25
40
−
−
TYP.
−0.7
0.45
12.0
0.5
40
55
MAX.
−1.5
0.65
NE3503M04
10
70
−
−
Unit
mA
mS
μ
dB
dB
V
A