ATF-551M4-TR1 Avago Technologies US Inc., ATF-551M4-TR1 Datasheet - Page 7

• Manufacturer Part Number: ATF-551M4-TR1
• Description: IC TRANS E-PHEMT GAAS MINIPAK
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-551M4-TR1

• Gain: 17.5dB
• Mfg Application Notes: ATF-541M4 AppNote
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.5dB
• Current - Test: 10mA
• Voltage - Test: 2.7V
• Power - Output: 14.6dBm
• Package / Case: 4-MiniPak (1412)
• Power Dissipation Pd: 270mW
• Rf Transistor Case: MiniPak
• Frequency Max: 10GHz
• Noise Figure Typ: 0.5dB
• Frequency Min: 450MHz
• Continuous Drain Current Id: 0.1µA
• Drain Current Idss Max: 10mA
• Drain Source Voltage Vds: 2.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 516-1509-2

ATF-551M4 Typical Performance Curves, continued
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise fig-
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From

Figure 21. Gain vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
Figure 24. IIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
-10
ure at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based
on production test board requirements. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned
for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measure-
ments.
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
30
25
20
15
10
20
15
10
-5
5
5
0
0
0
1
1
FREQUENCY (GHz)
FREQUENCY (GHz)
2
2
3
3
4
4
[1]
[1]
5
5
-40°C
25°C
85°C
-40°C
25°C
85°C
.
.
6
6
Figure 22. Fmin vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
Figure 25. P1dB vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
16
15
14
13
12
11
10
0
0
0
1
1
-40°C
25°C
85°C
FREQUENCY (GHz)
FREQUENCY (GHz)
2
2
3
3
4
4
5
[2]
5
[1]
-40°C
25°C
85°C
.
.
6
6
Figure 23. OIP3 vs. Temperature and
Frequency with Bias at 2.7V, 10 mA
25
24
23
22
21
20
19
0
1
FREQUENCY (GHz)
2
3
4
5
[1]
-40°C
25°C
85°C
.
6