ATF-551M4-TR1 Avago Technologies US Inc., ATF-551M4-TR1 Datasheet - Page 21

• Manufacturer Part Number: ATF-551M4-TR1
• Description: IC TRANS E-PHEMT GAAS MINIPAK
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-551M4-TR1

• Gain: 17.5dB
• Mfg Application Notes: ATF-541M4 AppNote
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.5dB
• Current - Test: 10mA
• Voltage - Test: 2.7V
• Power - Output: 14.6dBm
• Package / Case: 4-MiniPak (1412)
• Power Dissipation Pd: 270mW
• Rf Transistor Case: MiniPak
• Frequency Max: 10GHz
• Noise Figure Typ: 0.5dB
• Frequency Min: 450MHz
• Continuous Drain Current Id: 0.1µA
• Drain Current Idss Max: 10mA
• Drain Source Voltage Vds: 2.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 516-1509-2

R7 is chosen to be 1 kΩ. This resistor keeps a small
amount of current flowing through Q2 to help maintain
bias stability. R6 is chosen to be 10 KΩ. This value of re-
sistance is high enough to limit Q1 gate current in the
presence of high RF drive levels as experienced when
Q1 is driven to the P1dB gain compression point. C7
provides a low frequency bypass to keep noise from Q2
effecting the operation of Q1. C7 is typically 0.1 µF.
ATF-551M4 Die Model
ATF-551M4 Minipak Model
SOURCE
21
Port
S1
Num=2
Port
G
Num=1
GATE
Advanced_Curtice2_Model
MESFETM1
NFET=yes
PFET=no
Vto=0.3
Beta=0.444
Lambda=72e-3
Alpha=13
Tau=
Tnom=16.85
Idstc=
Ucrit=-0.72
Vgexp=1.91
Gamds=1e-4
Vtotc=
Betatce=
Rgs=0.5 Ohm
INSIDE Package
Var
Egn
TLINP
TL3
Z=Z2 Ohm
L=23.6 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
C
C1
C=0.28 pF
TLINP
TL9
Z=Z2 Ohm
L=11 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
VAR
VAR1
K=5
Z2=85
Z1=30
L
L1
L=0.234 nH
R=0.001
L
L4
L=0.281 nH
R=0.001
TLINP
TL1
Z=Z2/2 Ohm
L=22 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
Rf=
Gscap=2
Cgs=0.6193 pF
Cgd=0.1435 pF
Gdcap=2
Fc=0.65
Rgd=0.5 Ohm
Rd=2.025 Ohm
Rg=1.7 Ohm
Rs=0.675 Ohm
Ld=
Lg=0.094 nH
Ls=
Cds=0.100 pF
Rc=390 Ohm
GaAsFET
FET1
Mode1=MESFETM1
Mode=Nonlinear
MSUB
MSub2
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
MSub
Crf=0.1 F
Gsfwd=
Gsrev=
Gdfwd=
Gdrev=
R1=
R2=
Vbi=0.95
Vbr=
Vjr=
Is=
Ir=
Imax=
Xti=
Eg=
C=0.046 pF
L
L7
L=0.234 nH
R=0.001
TLINP
TL2
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
L
L6
L=0.147 nH
R=0.001
C2
C
Maximum Suggested Gate Current
The maximum suggested gate current for the ATF-
551M4 is 1 mA. Incorporating resistor R5 in the passive
bias network or resistor R6 in the active bias network
safely limits gate current to 500 µA at P1dB drive levels.
In order to minimize component count in the passive
biased amplifier circuit, the 3 resistor bias circuit consist-
ing of R1, R2, and R5 can be simplified if desired. R5 can
be removed if R1 is replaced with a 5.6KΩ resistor and
if R2 is replaced with a 27KΩ resistor. This combination
should limit gate current to a safe level.
N=
Fnc=1 MHz
R=0.08
P=0.2
C=0.1
Taumdl=no
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
AllParams=
TLINP
TL5
Z=Z2 Ohm
L=27.5 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL7
Z=Z2/2 Ohm
L=5.2 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
SOURCE
DRAIN
Port
S2
Num=4
Port
D
Num=3