BF1109WR,115 NXP Semiconductors, BF1109WR,115 Datasheet - Page 6

• Manufacturer Part Number: BF1109WR,115
• Description: MOSFET N-CH 11V 30MA CMPAK-4
• Manufacturer: NXP Semiconductors

Specifications of BF1109WR,115

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Gain: 20dB
• Voltage - Rated: 11V
• Current Rating: 30mA
• Noise Figure: 1.5dB
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 11 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934050280115; BF1109WR T/R; BF1109WR T/R

NXP Semiconductors
1997 Dec 08
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FETs
V
f
unw
V
T
(dBμV)
Fig.11 Unwanted voltage for 1% cross-modulation
DS
Fig.9
V unw
j
G2-S
= 25 C.
(mA)
= 60 MHz; T
120
110
100
= 9 V; V
I D
90
80
16
12
= 4 V.
8
4
0
0
0
as a function of gain reduction;
typical values (see Fig.18).
Drain current as a function of drain-source
voltage; typical values.
G2nom
amb
= 4 V; I
2
= 25 C.
20
Dnom
4
= 12 mA; f
6
w
gain reduction (dB)
40
= 50 MHz;
8
V DS (V)
MDA619
MDA617
60
10
6
handbook, halfpage
V
Fig.10 Drain current as a function of gate 1 current;
DS
(mA)
I D
= 9 V; V
16
12
8
4
0
BF1109; BF1109R; BF1109WR
−8
typical values.
G2-S
= 4 V; T
−6
j
= 25 C.
−4
Product specification
−2
I G1 (μA)
MDA618
0