BF545A,215 NXP Semiconductors, BF545A,215 Datasheet - Page 6

• Manufacturer Part Number: BF545A,215
• Description: MOSFET N-CH 30V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF545A,215

• Package / Case: SST3 (SOT-23-3)
• Current Rating: 6.5mA
• Transistor Type: N-Channel JFET
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: - 30 V
• Continuous Drain Current: 6.5 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 30 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Frequency: -
• Gain: -
• Noise Figure: -
• Current - Test: -
• Voltage - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933912900215::BF545A T/R::BF545A T/R

Philips Semiconductors
9397 750 13391
Product data sheet
Fig 4. Common-source output admittance as a
Fig 6. Typical output characteristics.
(mA)
( S)
(1) V
(2) V
(3) V
Y
I
D
os
80
60
40
20
0
6
4
2
0
V
function of gate-source cut-off voltage; typical
values.
BF545A
T
0
0
j
DS
GS
GS
GS
= 25 C.
= 15 V; V
= 0 V.
= 0.5 V.
= 1.0 V.
4
2
GS
= 0 V; T
8
4
j
= 25 C.
12
6
V
(1)
(2)
(3)
V
GSoff
DS
mbb465
mbb462
(V)
(V)
16
Rev. 03 — 5 August 2004
8
BF545A; BF545B; BF545C
Fig 5. Drain-source on-resistance as a function of
Fig 7. Typical input characteristics.
N-channel silicon junction field-effect transistors
R
(mA)
DSon
( )
I
D
300
200
100
0
6
4
2
0
V
gate-source cut-off voltage; typical values.
BF545A
V
0
DS
3
DS
= 100 mV; V
= 15 V; T
2
j
= 25 C.
2
GS
= 0 V; T
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
4
j
= 25 C.
1
6
V
V
GS
GSoff
(V)
mbb464
mbb463
(V)
0
8
6 of 15