BF1211R,215 NXP Semiconductors, BF1211R,215 Datasheet - Page 11

• Manufacturer Part Number: BF1211R,215
• Description: MOSFET N-CH DUAL GATE 6V SOT143R
• Manufacturer: NXP Semiconductors

Specifications of BF1211R,215

• Package / Case: SC-61B
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 29dB
• Voltage - Rated: 6V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 15mA
• Voltage - Test: 5V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Configuration: Single Dual Gate
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 30 mA
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1960-2; 934057512215; BF1211R

NXP Semiconductors
PACKAGE OUTLINES
2003 Dec 16
Plastic surface-mounted package; 4 leads
N-channel dual-gate MOS-FETs
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT143B
1.1
0.9
A
max
0.1
A 1
4
1
y
0.48
0.38
b p
b 1
IEC
0.88
0.78
b 1
D
e
0.15
0.09
e 1
c
JEDEC
3.0
2.8
D
REFERENCES
b p
0
1.4
1.2
E
3
2
1.9
w
e
B
JEITA
scale
M
11
1
B
1.7
e 1
v
M
H E
2.5
2.1
2 mm
A
BF1211; BF1211R; BF1211WR
A
0.45
0.15
L p
A 1
0.55
0.45
Q
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
Q
L p
Product specification
0.1
y
A
ISSUE DATE
04-11-16
06-03-16
c
SOT143B
X