BF998WR,115 NXP Semiconductors, BF998WR,115 Datasheet - Page 7

• Manufacturer Part Number: BF998WR,115
• Description: MOSFET N-CH 12V 30MA SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BF998WR,115

• Package / Case: SOT-343R
• Current Rating: 30mA
• Frequency: 200MHz
• Transistor Type: N-Channel Dual Gate
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 8V
• Configuration: Single Dual Gate
• Continuous Drain Current: 30 mA
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 300 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934031450115::BF998WR T/R::BF998WR T/R

NXP Semiconductors
1997 Sep 05
N-channel dual-gate MOS-FET
V
I
V
I
D
D
(mS)
DS
DS
Fig.13 Forward transfer admittance and phase as
y fs
= 10 mA; T
= 10 mA; T
10
10
(mS)
= 8 V; V
= 8 V; V
y is
1
Fig.11 Input admittance as a function of the
10
10
2
10
10
1
1
2
10
a function of frequency; typical values.
G2-S
G2-S
amb
amb
frequency; typical values.
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
2
10
y fs
ϕ
2
fs
b is
g is
f (MHz)
f (MHz)
MGC468
MGC466
10
3
10
10
10
1
(deg)
ϕ
3
2
fs
7
V
I
V
I
D
D
(μS)
DS
Fig.12 Reverse transfer admittance and phase as
DS
y rs
= 10 mA; T
= 10 mA; T
10
10
10
(mS)
= 8 V; V
= 8 V; V
Fig.14 Output admittance as a function of the
1
y os
10
10
3
2
10
10
1
1
2
10
a function of frequency; typical values.
G2-S
G2-S
amb
amb
frequency; typical values.
= 4 V.
= 4 V.
= 25 C.
= 25 C.
10
2
ϕ
y rs
10
rs
2
f (MHz)
Product specification
f (MHz)
b os
g os
BF998WR
MGC467
MGC469
10
3
10
10
10
10
1
(deg)
ϕ
3
3
2
rs