BF1105R,215 NXP Semiconductors, BF1105R,215 Datasheet - Page 10

MOSFET N-CH 7V 30MA SOT-143R

BF1105R,215

Manufacturer Part Number
BF1105R,215
Description
MOSFET N-CH 7V 30MA SOT-143R
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF1105R,215

Package / Case
SOT-143R
Transistor Type
N-Channel Dual Gate
Frequency
800MHz
Gain
20dB
Voltage - Rated
7V
Current Rating
30mA
Noise Figure
1.7dB
Voltage - Test
5V
Configuration
Dual
Continuous Drain Current
30 mA
Drain-source Breakdown Voltage
7 V
Gate-source Breakdown Voltage
7 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Power Dissipation
200 mW
Transistor Polarity
Dual N-Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Current - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934050330215
BF1105R T/R
BF1105R T/R
NXP Semiconductors
PACKAGE OUTLINES
1997 Dec 02
Plastic surface-mounted package; 4 leads
N-channel dual-gate MOS-FETs
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT143B
1.1
0.9
A
max
0.1
A 1
4
1
y
0.48
0.38
b p
b 1
IEC
0.88
0.78
b 1
D
e
0.15
0.09
e 1
c
JEDEC
3.0
2.8
D
REFERENCES
b p
0
1.4
1.2
E
3
2
1.9
w
e
B
JEITA
scale
M
10
1
B
1.7
e 1
v
M
H E
2.5
2.1
2 mm
A
BF1105; BF1105R; BF1105WR
A
0.45
0.15
L p
A 1
0.55
0.45
Q
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
Q
L p
Product specification
0.1
y
A
ISSUE DATE
04-11-16
06-03-16
c
SOT143B
X

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