BF256B Fairchild Semiconductor, BF256B Datasheet

BF256B

Manufacturer Part Number

BF256B

Description

IC AMP RF N-CH 30V TO-92

Manufacturer

Fairchild Semiconductor

Datasheet

1.BF256B.pdf (3 pages)

Specifications of BF256B

Transistor Type

N-Channel JFET

Voltage - Rated

30V

Current Rating

13mA

Package / Case

TO-92-3 (Standard Body), TO-226

Configuration

Single

Transistor Polarity

N-Channel

Power Dissipation

350 mW

Gate-source Breakdown Voltage

- 30 V

Drain Current (idss At Vgs=0)

1.5 mA to 7 mA

Forward Transconductance Gfs (max / Min)

0.0045 S

Maximum Operating Temperature

+ 150 C

Maximum Drain Gate Voltage

30 V

Minimum Operating Temperature

- 55 C

Mounting Style

Through Hole

Power Dissipation Pd

350mW

Operating Temperature Range

-55Â°C To +150Â°C

No. Of Pins

Leaded Process Compatible

Yes

Peak Reflow Compatible (260 C)

Yes

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power - Output

Frequency

Gain

Noise Figure

Current - Test

Voltage - Test

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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N-Channel RF Amplifiers

• This device is designed for VHF/UHF amplifiers.

• Sourced from process 50.

Absolute Maximum Ratings

Electrical Characteristics

Off Characteristics

On Characteristics

Small Signal Characteristics

gfs

Symbol

GSS

DSS

STG

(BR)GSS

Symbol

(off)

Gate-Source Breakdown Voltage

Gate-Source

Gate-Source Cutoff Voltage

Gate Reverse Current

Zero-Gate Voltage Drain Current

Common Source Forward Transconductance

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Total Device Dissipation @T

Derate above 25 C

Operating and storage Temperature Range

Parameter

BF256A/BF256B/BF256C

BF256A

BF256B

BF256C

=25 C unless otherwise noted

Parameter

=25 C unless otherwise noted

=25 C

= 0, I

= 15V, I

= 15V, V

= -20V, V

= 15V, V

Test Condition

= 1 A

= 200 A

= 10nA

= 0, f = 1KHz

= 0

1. Gate 2. Source 3. Drain

- 55 ~ 150

Value

350

-30

2.8

Min.

-0.5

-30

4.5

TO-92

Max.

-7.5

-8

-5

mW/ C

Rev. A, June 2003

Units

mmhos

Units

Related parts for BF256B

BF256B Summary of contents

Page 1

... Common Source Forward Transconductance ©2003 Fairchild Semiconductor Corporation T =25 C unless otherwise noted a Parameter = =25 C unless otherwise noted a Test Condition 15V 200 15V 10nA -20V BF256A V = 15V BF256B BF256C V = 15V TO- Gate 2. Source 3. Drain Value Units 350 mW 2.8 mW 150 C Min. Max. Units -30 -0.5 -7.5 -0 ...

Page 2

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2003 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, June 2003 ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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