SD57060 STMicroelectronics, SD57060 Datasheet - Page 7

• Manufacturer Part Number: SD57060
• Description: TRANSISTOR RF PWR LDMOST M243
• Manufacturer: STMicroelectronics

Specifications of SD57060

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 7A
• Current - Test: 100mA
• Voltage - Test: 28V
• Power - Output: 60W
• Package / Case: M243
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 65V
• Output Power (max): 60W
• Power Gain (typ)@vds: 15dB
• Frequency (max): 1GHz
• Package Type: Case M-243
• Pin Count: 3
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 88@28VpF
• Output Capacitance (typ)@vds: 44@28VpF
• Reverse Capacitance (typ): 1.7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Number Of Elements: 1
• Power Dissipation (max): 108000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5479; SD57060

SD57060
Figure 7.
Figure 9.
90
80
70
60
50
40
30
20
10
0
30
29
28
27
26
25
24
10
0
Output power vs drain-source
voltage
Power gain vs output power
15
40
f = 30 MHz
VDD = 50 V
IDQ = 250 mA
Pout, OUTPUT POWER (W)
Drain-Source Voltage (V)
80
20
120
25
Pin = 3 W
160
IDQ = 100 mA
f = 1945 MHz
30
Pin = 1 W
Pin = 2 W
200
35
Figure 8.
Figure 10. Safe operating area
10
-15
-20
-25
-30
-35
-40
-45
-50
-55
1
1
1
f1 = 945 MHz
f2 = 945.1 MHz
V
Tj=200°C
DD
Intermodulation distortion vs
output power
= 28 V
Vds, Drain Source Voltage (V)
Pout, PEP (W)
I
Tc=100°C
10
DQ
10
= 250 mA
Typical performance
I
DQ
= 100 mA
Tc=70°C
I
DQ
= 400 mA
100
7/16
100