PD57018S-E STMicroelectronics, PD57018S-E Datasheet - Page 9
![TRANS RF N-CH FET LDMOST PWRSO10](/photos/5/64/56454/pd57018s-e_sml.jpg)
PD57018S-E
Manufacturer Part Number
PD57018S-E
Description
TRANS RF N-CH FET LDMOST PWRSO10
Manufacturer
STMicroelectronics
Datasheet
1.PD57018-E.pdf
(25 pages)
Specifications of PD57018S-E
Transistor Type
LDMOS
Frequency
945MHz
Gain
16.5dB
Voltage - Rated
65V
Current Rating
2.5A
Current - Test
100mA
Voltage - Test
28V
Power - Output
18W
Package / Case
PowerSO-10 Exposed Bottom Pad
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.76 Ohms
Forward Transconductance Gfs (max / Min)
1 S
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A
Power Dissipation
31.7 W
Maximum Operating Temperature
+ 165 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Details
Other names
497-5306-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD57018S-E
Manufacturer:
ST
Quantity:
20 000
PD57018-E
Figure 21. Output power vs drain voltage
25
20
15
10
5
0
15
20
925 MHz
945 MHz
25
960 MHz
30
Idq = 100 mA
Pin = .3 W
Doc ID 12214 Rev 5
35
Figure 22. Output power vs gate voltage
25
20
15
10
5
0
0
0.5
1
VGS, GATE BIAS VOLTAGE (V)
1.5
Typical performance
2
945 MHz
2.5
925 MHz
V
Pin = .3 W
3
DD
960 MHz
= 28 V
3.5
9/25