PD57006STR-E STMicroelectronics, PD57006STR-E Datasheet - Page 7

• Manufacturer Part Number: PD57006STR-E
• Description: TRANS RF N-CH FET POWERSO-10RF
• Manufacturer: STMicroelectronics

Specifications of PD57006STR-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 1A
• Current - Test: 70mA
• Voltage - Test: 28V
• Power - Output: 6W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 1A
• Drain Source Voltage (max): 65V
• Output Power (max): 6W(Min)
• Power Gain (typ)@vds: 15dB
• Frequency (max): 945MHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 0.58S
• Input Capacitance (typ)@vds: 27@28VpF
• Output Capacitance (typ)@vds: 14@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 50%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 20000mW
• Vswr (max): 10(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-10098-2; PD57006STR-E

PD57006-E
4.1
Figure 6.
Figure 8.
9
8
7
6
5
4
3
2
0
1
18
16
14
10
12
8
6
4
0
0
1
PD57006-E
Output power vs input power
Power gain vs output power
0.1
2
945 MHz
Pout, OUTPUT POWER (W)
Pin, INPUT POWER (W)
3
4
0.2
925 MHz
960 MHz
5
960 MHz
925 MHz
6
945 MHz
0.3
Vdd=28V
Idq=70mA
Vdd=28V
Idq=70mA
7
Doc ID 12611 Rev 3
8
0.4
9
Figure 7.
Figure 9.
60
50
40
30
20
10
-10
-15
-20
-25
-5
0
0
0
945 MHz
1
1
Input return loss vs output power
Drain efficiency vs output power
2
2
960 MHz
925 MHz
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
3
3
4
4
5
Typical performance
5
925 MHz
6
6
945 MHz
960 MHz
Vdd=28V
Idq=70mA
Vdd=28V
Idq=70mA
7
7
8
8
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9