PD57070-E STMicroelectronics, PD57070-E Datasheet - Page 6

• Manufacturer Part Number: PD57070-E
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD57070-E

• Transistor Type: LDMOS
• Frequency: 945MHz
• Gain: 14.7dB
• Voltage - Rated: 65V
• Current Rating: 7A
• Current - Test: 250mA
• Voltage - Test: 28V
• Power - Output: 70W
• Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 65V
• Output Power (max): 70W(Min)
• Power Gain (typ)@vds: 14.7dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Formed lead)
• Pin Count: 3
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 91@28VpF
• Output Capacitance (typ)@vds: 58@28VpF
• Reverse Capacitance (typ): 3.8@28VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 50%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 95000mW
• Vswr (max): 5(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-6721-5; PD57070-E

Typical performance
4
6/22
Figure 3.
Figure 5.
1000
1.02
1.01
0.99
0.98
0.97
100
10
1
1
-25
0
f = 1 MHz
Typical performance
4
Capacitance vs supply voltage
Gate-source voltage vs
case temperature
0
8
25
12
Vdd (V)
Tc (°C )
Crss
Cis s
Coss
16
50
20
75
ID = 6 A
ID = 5 A
ID = 4 A
ID = 3 A
ID = 2 A
24
Doc ID 12528 Rev 2
100
28
Figure 4.
Figure 6.
90
80
70
60
50
40
30
20
10
8
7
6
5
4
3
2
1
0
0
1
0
Vds = 10 V
Drain current vs gate source
voltage
Output power vs input power
2
925 MHz
1
945 MHz
3
PD57070-E, PD57070S-E
Vgs (V)
Pin (W )
890 MHz
960 MHz
2
4
Vdd = 28 V
Idq = 250 m A
3
5
4
6