PD55035S-E STMicroelectronics, PD55035S-E Datasheet - Page 7

• Manufacturer Part Number: PD55035S-E
• Description: TRANS RF N-CH FET LDMOST PWRSO10
• Manufacturer: STMicroelectronics

Specifications of PD55035S-E

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 16.9dB
• Voltage - Rated: 40V
• Current Rating: 7A
• Current - Test: 200mA
• Voltage - Test: 12.5V
• Power - Output: 35W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 7A
• Drain Source Voltage (max): 40V
• Output Power (max): 35W(Min)
• Power Gain (typ)@vds: 16.9dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5(Min)S
• Input Capacitance (typ)@vds: 92@12.5VpF
• Output Capacitance (typ)@vds: 73@12.5VpF
• Reverse Capacitance (typ): 6.1@12.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 62%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 95000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-5303-5

PD55035-E, PD55035S-E
Figure 7.
Figure 9.
-10
-15
-20
-25
-30
24
22
20
18
16
14
12
10
-5
0
0
0
Vdd =12.5 V
Idq = 200 m A
Power gain vs output power
Input return loss vs output power
10
480, 500 MHz
10
20
20
520 MHz
Pout (W )
Pout (W )
480 MHz
30
30
520 MHz
Vdd = 12.5 V
Idq = 200 m A
500 MHz
40
40
Doc ID 12331 Rev 2
50
50
Figure 8.
Figure 10. Output power vs bias current
70
60
50
40
30
20
10
38
37
36
35
34
33
0
0
Efficiency vs output power
10
200
400
20
Pout (W )
520 MHz
Idq (m A)
Typical performance
500 MHz
600
30
480 MHz
480 MHz
Vdd = 12.5 V
Pin = 0.72 W
Vdd = 12.5 V
Idq = 200 m A
500 MHz
800
40
520 MHz
1000
50
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